Large-area quantum dot light-emitting device
A quantum dot light-emitting, large-area technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problem of low light extraction efficiency
Inactive Publication Date: 2018-04-27
SHANGHAI UNIV
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[0003] Based on this, it is necessary to provide a large-area quantum dot light-emitting device for the problem of low light extraction efficiency.
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[0016] In order to make the purpose, features and advantages of the present invention more obvious and understandable, the specific implementation manners of the present invention will be described in detail below in conjunction with the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways different from those described here, and those skilled in the art can make similar improvements without departing from the connotation of the present invention, so the present invention is not limited by the specific implementations disclosed below.
[0017] The large-area quantum dot light-emitting device proposed by the present invention includes: a substrate 10 , a cathode part 20 , an anode part 30 and a quantum light-emitting layer 40 .
[0018] see figure 1 . Specifically, the substrate 10 adopts a large-ar...
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A large-area quantum dot light-emitting device comprises a substrate, cathode parts, anode parts and a quantum light-emitting layer, wherein each cathode part comprises a cathode, an electron injection layer and an electron transport layer which are sequentially stacked, and the cathode is arranged on the substrate; each anode part comprises an anode, a hole injection layer and a hole transport layer which are sequentially stacked, and the anode is arranged on the substrate; the quantum light-emitting layer is connected with the cathode parts and the anode parts; the cathode parts and the anode parts are arranged on the same side of the quantum light-emitting layer; the plurality of cathode parts and the plurality of anode parts are arranged in an alternated array manner. According to the large-area quantum dot light-emitting device, the cathode parts and the anode parts are arranged on the same side of the quantum light-emitting layer, and light directly comes out of the quantum light-emitting layer, so that light loss caused by each layer of the conventional component structure is avoided and the light brightness is improved; furthermore, through adoption of the alternated array arrangement of the cathode parts and the anode parts, electrodes with reverse polarity are distributed around each electrode, so that transfer and composition of electrons and holes are sufficiently promoted and the utilization rate of the electrodes is increased.
Description
technical field [0001] The invention relates to the field of display technology, in particular to a large-area quantum dot light-emitting display device. Background technique [0002] Quantum dot light-emitting diode is a new technology between liquid crystal and OLED. It has the advantages of low cost and low power consumption and has attracted people's attention. It is gradually being widely used and has a good market prospect. The structure of traditional quantum light-emitting devices is stacked, and light is excited through a multi-layer structure, and each layer will cause damage to light to varying degrees. The problem is even more serious in large-area quantum light-emitting devices. Contents of the invention [0003] Based on this, it is necessary to provide a large-area quantum dot light-emitting device for the problem of low light extraction efficiency. [0004] A large-area quantum dot light-emitting device, comprising: a substrate; a cathode part comprising a...
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IPC IPC(8): H01L33/36H01L33/06
CPCH01L33/06H01L33/382
Inventor 曹进张雪周洁谢婧薇陈赟汉陈安平魏翔张建华
Owner SHANGHAI UNIV