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Method of manufacturing semiconductor device

A semiconductor and device technology, applied in the field of isolation structure fabrication, can solve the problems of size, size and space reduction, interference with flash memory storage area, etc., and achieve the effect of reducing coupling and reducing interference mechanism

Active Publication Date: 2015-08-12
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Scalability (scalablity) is a key factor in the development of flash memory technology. With the increasing maturity of semiconductor integrated circuit industry technology and the rapid development of ultra-large-scale integrated circuits, integrated circuits with higher performance and stronger functions require larger Component density, and the size, size and space of each component, between components or each component itself need to be further reduced. For flash memory with self aligned floating gate (self aligned floating gate), the distance between floating gate and floating gate smaller and smaller, which will create interference mechanisms that limit the performance of the flash memory area

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Embodiment Construction

[0019] In the following description, numerous specific details are given in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without one or more of these details. In other examples, some technical features known in the art are not described in order to avoid confusion with the present invention.

[0020] In order to thoroughly understand the present invention, detailed steps will be presented in the following description to illustrate how the present invention solves the existing problems. Apparently, the preferred embodiments of the present invention are described in detail as follows, however, the present invention may also have other implementations apart from these detailed descriptions.

[0021] It should be noted that the terms used herein are for the purpose of describing specific embodiments only, and are not intended to limit exemplary embodimen...

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Abstract

The invention discloses a method of manufacturing a semiconductor device, and provides a method of forming an STI structure by performing carbon implantation on the top of a STI material layer. The STI structure formed by carbon implantation and possessing lower dielectric constants is formed in intervals among floating gates, and coupling among the floating gates is reduced, thereby reducing disturb mechanisms in a semiconductor device.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for manufacturing an isolation structure for NOR Flash. Background technique [0002] Memory is used to store a large amount of digital information. According to recent surveys, memory chips account for about 30% of semiconductor transactions worldwide. Over the years, technological progress and market demand have led to more and more high-density various Types of memory, such as RAM (random access memory), SRAM (static random access memory), DRAM (dynamic random access memory) and FRAM (ferroelectric memory), etc. Among them, flash memory is FLASH, which has become the mainstream of non-volatile semiconductor storage technology, and can still maintain on-chip information even after the power supply is turned off; the memory is electrically erasable and reprogrammable without special high voltage ; The flash memory has the characteristics of low cost and high den...

Claims

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Application Information

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IPC IPC(8): H01L21/8247
CPCH01L21/31155H01L21/76224H10B41/00
Inventor 陈勇
Owner SEMICON MFG INT (SHANGHAI) CORP