A kind of preparation method of synthetic fluorine phlogopite

Abstract

The invention relates to a preparation method for manually synthesized fluorophlogopite. The preparation method comprises the following steps: (1) preparing raw materials, wherein the molar ratio of SiO2, MgO, Al2O3, K2CO3 and K2SiF6 in the raw materials is as follows: SiO2: MgO: Al2O3: K2CO3: K2SiF6=(16-a): 18: 3: (1-a): (2+a), and a is greater than or equal to 0.1 but less than or equal to 0.5; (2) bricking a furnace body and mounting an electrode; (3) filling the uniformly mixed raw materials into the furnace body; (4) electrifying to smelt the raw materials in the furnace body; (5) cutting off power and naturally cooling and separating out crystals; and (6) opening the furnace and taking out manually synthesized fluorophlogopite. By optimizing the raw material formula, the high-quality manually synthesized fluorophlogopite is synthesized; and the prepared manually synthesized fluorophlogopite does not contain other crystals, meets the pearl package requirement, and is clear, transparent, flexible, complete in crystal, large in crystal plates and good in dielectric properties.

Description

technical field [0001] The invention relates to artificially synthesized mica, in particular to a preparation method of artificially synthesized fluorphlogopite. Background technique [0002] At present, the internal heat method is generally used to burn artificially synthesized fluorophlogopite. Basically, quartz sand, alumina powder, fused magnesia, potassium fluorosilicate, potassium carbonate and other materials are used for high-temperature melting, and then synthetic fluorophlogopite is crystallized. piece. There are still relatively large problems in the existing technology of firing artificially synthesized fluorophlogopite by internal heat method, such as: [0003] (1) The formula of raw materials is not accurate enough, which may easily cause incomplete reaction. In some processes, there are too many flux components, resulting in a large amount of glass phase and wafer adhesion. There are too many other ingredients in some processes, and other impurity crystals ...

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Problems solved by technology

[0004] (2) Synthetic process parameter setting is unreasonable

In some processes, the size of the furnace body is small and the melting input power is large, so that the temperature of the melting melt is high, the viscosity of the melt is small, and the F and SiF in the raw materials 4 The main components are easy to volatilize, so that the crystal lattice defect occurs due to the lack of ion arrangement when the wafer is precipitated, the wafer is brittle, the mechanical performance is poor, the pass rate of subsequent processing is not high, and the electrical performance is unstable; on the contrary, the furnace body is large and melts. The input power of the system is small, so that the temperature of the melting melt is low, the viscosity of the melt is high, the raw materials cannot be completely melted, there are many crystal nuclei, and the crystal crystals are small, and crystals with good performance cannot be obtained, which affects product quality and output.

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