Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method of fabricating nitride film and method of controlling compressive stress of the same

A manufacturing method and compressive stress technology, applied in gaseous chemical plating, semiconductor/solid-state device manufacturing, coating, etc., can solve problems such as difficulty in properly controlling the stress level of nitrides

Active Publication Date: 2015-09-02
WONIK IPS CO LTD
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the problem with the disclosed nitride production method is that it is difficult to properly control the stress level of the nitride while stably maintaining the film quality of the nitride.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of fabricating nitride film and method of controlling compressive stress of the same
  • Method of fabricating nitride film and method of controlling compressive stress of the same
  • Method of fabricating nitride film and method of controlling compressive stress of the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0055] Several embodiments of the present invention are exemplarily described below with reference to the accompanying drawings.

[0056] Throughout the specification, references to a constituent element such as a film, region, or substrate being "on" other constituent elements may be interpreted to mean that said one constituent element is in direct contact with said other constituent elements "on" or that there is another element intervening therebetween. constituent elements. In contrast, reference is made to one constituent element being "directly on top of" the other constituent elements, with no intervening additional constituent elements present.

[0057] Hereinafter, embodiments of the present invention will be described with reference to the schematically illustrated drawings. In the drawings, for example, deformation of the illustrated shapes can be expected due to manufacturing techniques and / or tolerances. Therefore, the embodiments of the inventive concept shoul...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a method of fabricating a nitride film, which may easily control compressive stress while stably maintaining the film quality using the atomic layer deposition, and the nitride film having compressive stress is formed on a substrate by performing a unit cycle at least one time, the unit cycle including: a first step of providing a source gas on the substrate to absorb at least of the source gas on the substrate; a second step of providing a first purge gas on the substrate; a third step of forming a unit deposition film on the substrate by providing the substrate with a stress controlling gas including a nitrogen gas (N2) and a reaction gas containing nitrogen components (N) other than the nitrogen gas (N2) in a plasma state; and a fourth step of providing a second purge gas on the substrate.

Description

technical field [0001] The present invention relates to a method for making a nitride film and a method for controlling its compressive stress, more specifically, it relates to a method for making a nitride film and a method for controlling its compressive stress by atomic layer deposition. Background technique [0002] Methods for improving the performance of electronic components include: a method for changing the electrical characteristics of a deformed upper or lower material through a stressed nitride film. For example, in the manufacture of CMOS devices, in order to cause local lattice deformation in the channel region of the transistor, a nitride film with compressive stress can be formed on the PMOS region. In this case, it is necessary to control the stress level generated by the deposited nitride within a specified range. However, a problem with the disclosed nitride production method is that it is difficult to appropriately control the stress level of the nitride...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/314H01L21/318
CPCH01L21/02274H01L21/0228H01L21/0217C23C16/45536C23C16/34C23C16/4408H01L21/02172H01L21/02269C23C16/45534C23C16/4554H01L21/76829
Inventor 李庚垠罗斗贤张準硕赵炳哲柳东浩朴周焕金颍俊
Owner WONIK IPS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com