Stacked module heat radiation structure and manufacturing method thereof

A heat dissipation structure and module technology, which is applied in the production of stacked module heat dissipation structure and the field of stacked module heat dissipation structure, can solve the problems of high chip temperature in the package, exceeding thermal specifications, complex structure, etc., and achieve easy operation and thermal resistance. Reduced, easy-to-step effects

Inactive Publication Date: 2015-09-09
NAT CENT FOR ADVANCED PACKAGING
3 Cites 3 Cited by

AI-Extracted Technical Summary

Problems solved by technology

[0003] However, PoP packaging usually adopts a two-layer package stacking structure. This vertical stacking makes the PoP package structure more complicated, and the air fluidity between the upper and lower packages becomes poor. The heat dissipation of the PoP package is mainly through the upper package. and the bottom substrate as the main path, resul...
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Abstract

The invention discloses a stacked module heat radiation structure and a manufacturing method thereof. Second tin balls are welded on the lower surface of a lower packaging substrate. A third chip is fixed at the middle position of the upper surface of the lower packaging substrate. An upper packaging substrate is arranged above the lower packaging substrate. The middle position of the upper packaging substrate is provided with a window. First tin balls are welded on the lower surface of the upper packaging substrate. The first tin balls contact with the upper surface of the lower packaging substrate. The upper surface of the upper packaging substrate is provided with a plastic sealing member. A first chip is fixed on the upper surface of the upper packaging substrate at an inner position which corresponds with the plastic sealing member through first sealing glue. The projection of the base of a heat radiating plate penetrates through the window of the upper packaging substrate and is fixed with the upper surface of the third chip. According to the stacked module heat radiation structure, thermal resistance is reduced through the heat radiating plate structure, and a problem of overhigh temperature of the PoP can be effectively prevented.

Application Domain

Semiconductor/solid-state device detailsSolid-state devices +2

Technology Topic

Heat sinkRadiation +2

Image

  • Stacked module heat radiation structure and manufacturing method thereof
  • Stacked module heat radiation structure and manufacturing method thereof
  • Stacked module heat radiation structure and manufacturing method thereof

Examples

  • Experimental program(1)

Example Embodiment

[0037] The present invention will be further described below in conjunction with specific embodiments.
[0038] The heat dissipation structure of the stacked module includes a lower packaging substrate 1, a second solder ball 2, a second potting compound 3, a third chip 4, an upper packaging substrate 5, a first solder ball 6, a plastic package 7, and a first potting The encapsulant 8, the first chip 9, the heat sink 10, the second chip 11 and the lead 12, the heat sink 10 has an integrated base, and a downwardly convex protrusion is provided on the lower surface of the base; A second solder ball 2 is soldered on the lower surface of the package substrate 1, a third chip 4 is fixed on the middle of the upper surface of the lower package substrate 1 by a second potting glue 3, and an upper package substrate is provided above the lower package substrate 1. 5. A window is opened in the middle of the upper packaging substrate 5, and a first solder ball 6 is soldered on the lower surface of the upper packaging substrate 5. The first solder ball 6 is in contact with the upper surface of the lower packaging substrate 1 on the upper packaging substrate 5. The upper surface of the encapsulation body 7 is provided with a plastic encapsulation body 7, and the upper surface of the upper packaging substrate 5 corresponding to the internal position of the plastic encapsulation body 7 is upside down with the first chip 9 through the first potting glue 8. A second chip 11 is mounted on the upper surface of 5, and the second chip 11 is connected to the upper packaging substrate 5 by leads 12, and the protrusion of the base of the heat sink 10 passes through the window of the upper packaging substrate 5 and is fixed to the third chip 4 on the upper surface.
[0039] The material of the lower packaging substrate 1 is FR4 (ie, epoxy glass cloth laminate in the semiconductor packaging field), BT (ie, bismaleimide and triazine main resin in the semiconductor packaging field), or ABF (ie, semiconductor packaging Japanese Ajinomoto organic film in the field), and the thickness of the lower packaging substrate 1 is 0.1mm~1.0mm.
[0040] The material of the second potting compound 3 is epoxy resin, underfill compound or molding compound.
[0041] The material of the upper packaging substrate 5 is FR4, BT or ABF, and the thickness of the upper packaging substrate 5 is 0.1 mm to 1.0 mm.
[0042] The material of the plastic encapsulation body 7 is molding compound, potting glue or underfill glue.
[0043] The material of the first potting compound 8 is epoxy resin, underfill compound or molding compound.
[0044] A manufacturing method of a stacked module heat dissipation structure includes the following steps:
[0045] a. Select the upper packaging substrate 5, and open a window in the middle of the upper packaging substrate 5;
[0046] b. Flip-chip the first chip 9 on the upper surface of the upper package substrate 5 outside the window, and mount the second chip 11 on the upper surface of the upper package substrate 5 outside the window. Connect the upper surface of the second chip 11 to the upper surface The package substrate 5 is connected by leads 12;
[0047] c. Potting the first chip 9 with underfill glue. The temperature of the underfill glue is controlled at 50~100℃, and it needs to undergo curing treatment to form the final shape. The curing temperature is 125~175℃, and the curing time is controlled. In 2-8 hours, the first potting compound 8 is formed;
[0048] d. Plastic packaging is performed on the upper surface of the upper packaging substrate 5. The temperature during plastic packaging is controlled at 150-200°C, and the final molding needs to be cured. The curing temperature is controlled at 150-200°C, and the curing time is controlled at 2-8 hours. After curing, a plastic package 7 is formed. The plastic package 7 encapsulates the first chip 9 and the second chip 12, and the plastic package 7 completes the protection of the first chip 9 and the second chip 12;
[0049] e. Soldering the first solder ball 6 on the lower surface of the upper package substrate 5 to obtain the upper package body;
[0050] f. Select the lower package substrate 1, and flip-chip the third chip 4 on the upper surface of the lower package substrate 1,
[0051] g. Fill the flipped third chip 4 with underfill glue. The temperature of the underfill glue is controlled at 50~100℃, and it needs to undergo curing treatment for final molding. The curing temperature is 125~175℃, and the curing time is controlled. In 2-8 hours, the curing is completed to form the second potting glue 3, thereby obtaining the lower layer package;
[0052] h. The lower-layer package is mounted below the upper-layer package, and the lower-layer package and the upper-layer package are interconnected through the first solder ball 6;
[0053] i. A second solder ball 2 is soldered on the lower surface of the lower package substrate 1 in the lower package;
[0054] j. The base of the heat sink 10 is mounted on the third chip 4 through the window portion of the upper packaging substrate 5, and the manufacturing method of the heat dissipation structure of the stacked module ends.

PUM

PropertyMeasurementUnit
Thickness0.1 ~ 1.0mm

Description & Claims & Application Information

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