Stacked module heat radiation structure and manufacturing method thereof

[0037] The present invention will be further described below in conjunction with specific embodiments.

[0038] The heat dissipation structure of the stacked module includes a lower packaging substrate 1, a second solder ball 2, a second potting compound 3, a third chip 4, an upper packaging substrate 5, a first solder ball 6, a plastic package 7, and a first potting The encapsulant 8, the first chip 9, the heat sink 10, the second chip 11 and the lead 12, the heat sink 10 has an integrated base, and a downwardly convex protrusion is provided on the lower surface of the base; A second solder ball 2 is soldered on the lower surface of the package substrate 1, a third chip 4 is fixed on the middle of the upper surface of the lower package substrate 1 by a second potting glue 3, and an upper package substrate is provided above the lower package substrate 1. 5. A window is opened in the middle of the upper packaging substrate 5, and a first solder ball 6 is soldered on the lower surface of the upper packaging substrate 5. The first solder ball 6 is in contact with the upper surface of the lower packaging substrate 1 on the upper packaging substrate 5. The upper surface of the encapsulation body 7 is provided with a plastic encapsulation body 7, and the upper surface of the upper packaging substrate 5 corresponding to the internal position of the plastic encapsulation body 7 is upside down with the first chip 9 through the first potting glue 8. A second chip 11 is mounted on the upper surface of 5, and the second chip 11 is connected to the upper packaging substrate 5 by leads 12, and the protrusion of the base of the heat sink 10 passes through the window of the upper packaging substrate 5 and is fixed to the third chip 4 on the upper surface.

[0039] The material of the lower packaging substrate 1 is FR4 (ie, epoxy glass cloth laminate in the semiconductor packaging field), BT (ie, bismaleimide and triazine main resin in the semiconductor packaging field), or ABF (ie, semiconductor packaging Japanese Ajinomoto organic film in the field), and the thickness of the lower packaging substrate 1 is 0.1mm~1.0mm.

[0040] The material of the second potting compound 3 is epoxy resin, underfill compound or molding compound.

[0041] The material of the upper packaging substrate 5 is FR4, BT or ABF, and the thickness of the upper packaging substrate 5 is 0.1 mm to 1.0 mm.

[0042] The material of the plastic encapsulation body 7 is molding compound, potting glue or underfill glue.

[0043] The material of the first potting compound 8 is epoxy resin, underfill compound or molding compound.

[0044] A manufacturing method of a stacked module heat dissipation structure includes the following steps:

[0045] a. Select the upper packaging substrate 5, and open a window in the middle of the upper packaging substrate 5;

[0046] b. Flip-chip the first chip 9 on the upper surface of the upper package substrate 5 outside the window, and mount the second chip 11 on the upper surface of the upper package substrate 5 outside the window. Connect the upper surface of the second chip 11 to the upper surface The package substrate 5 is connected by leads 12;

[0047] c. Potting the first chip 9 with underfill glue. The temperature of the underfill glue is controlled at 50~100℃, and it needs to undergo curing treatment to form the final shape. The curing temperature is 125~175℃, and the curing time is controlled. In 2-8 hours, the first potting compound 8 is formed;

[0048] d. Plastic packaging is performed on the upper surface of the upper packaging substrate 5. The temperature during plastic packaging is controlled at 150-200°C, and the final molding needs to be cured. The curing temperature is controlled at 150-200°C, and the curing time is controlled at 2-8 hours. After curing, a plastic package 7 is formed. The plastic package 7 encapsulates the first chip 9 and the second chip 12, and the plastic package 7 completes the protection of the first chip 9 and the second chip 12;

[0049] e. Soldering the first solder ball 6 on the lower surface of the upper package substrate 5 to obtain the upper package body;

[0050] f. Select the lower package substrate 1, and flip-chip the third chip 4 on the upper surface of the lower package substrate 1,

[0051] g. Fill the flipped third chip 4 with underfill glue. The temperature of the underfill glue is controlled at 50~100℃, and it needs to undergo curing treatment for final molding. The curing temperature is 125~175℃, and the curing time is controlled. In 2-8 hours, the curing is completed to form the second potting glue 3, thereby obtaining the lower layer package;

[0052] h. The lower-layer package is mounted below the upper-layer package, and the lower-layer package and the upper-layer package are interconnected through the first solder ball 6;

[0053] i. A second solder ball 2 is soldered on the lower surface of the lower package substrate 1 in the lower package;

[0054] j. The base of the heat sink 10 is mounted on the third chip 4 through the window portion of the upper packaging substrate 5, and the manufacturing method of the heat dissipation structure of the stacked module ends.