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Three-level IGBT module test method, switching circuit and device

A test method and technology for switching circuits, which are applied to measuring devices, measuring current/voltage, measuring resistance/reactance/impedance, etc., can solve problems such as overvoltage damage to IGBTs and diodes, and achieve the effect of improving safety and simplifying the test method.

Active Publication Date: 2015-09-23
BEIJING GOLDWIND SCI & CREATION WINDPOWER EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the improvement of the turn-on and turn-off performance of the IGBT module, there will still be some adverse effects. For example, the turn-on current and turn-off current with a large slope will appear when the turn-on and turn-off are turned on. On the stray inductance, a large overvoltage will be induced, and the overvoltage and the bus voltage will be superimposed and act on the IGBT and the anti-parallel diode of the IGBT, which will cause overvoltage damage to the IGBT and the diode. Therefore, the test of the three-level The stray inductance of each connection bar and positive and negative bus bars of the topology is of great significance
[0003] However, the existing technology only tests the stray inductance of the positive and negative busbars, and there is no test for each connecting bar. In addition, the value of the stray inductance of the commutation circuit can be inferred to infer the overvoltage of the IGBT under various working conditions. At the same time, analyzing the reverse recovery characteristics of diodes plays a pivotal role in the commutation process, which can provide important data basis and technical support for the initial design of products

Method used

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  • Three-level IGBT module test method, switching circuit and device
  • Three-level IGBT module test method, switching circuit and device
  • Three-level IGBT module test method, switching circuit and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] figure 1 It is a schematic diagram of the circuit structure in which the freewheeling reactor is connected between the AC output terminal and the negative busbar terminal in the test method of the three-level IGBT module in Embodiment 1 of the present invention, as figure 1 As shown, the three-level IGBT module includes the first IGBT G1, the second IGBT G2, the third IGBT G3 and the fourth IGBT G4 connected in sequence, and the first DC support capacitor C1, the second DC support capacitor C2, the first Clamping diode D1 and second clamping diode D2, wherein the collector of the first IGBT G1 is connected to the positive busbar terminal DC+, the emitter of the fourth IGBT G4 is connected to the negative busbar terminal DC-, and the first DC support The connection terminal of the capacitor C1 and the second DC support capacitor C2 is the midpoint terminal DC0 of the busbar, and the connection terminal of the second IGBT G2 and the third IGBT G3 is the AC output terminal...

Embodiment 2

[0075] Figure 9 It is a schematic structural diagram of the test switching circuit of the three-level IGBT module of the second embodiment of the present invention, referring to Figure 9 , the dotted box in the figure shows a three-level IGBT module, which includes four sequentially connected IGBTs, two DC support capacitors and two clamping diodes, namely the first IGBT G1, the second IGBT G2, and the third IGBT G3 and the fourth IGBT G4, the first DC support capacitor C1, the second DC support capacitor C2, the first clamping diode D1, and the second clamping diode D2, wherein the collector of the first IGBT G1 and the positive busbar terminal DC+ The connection row between is the first connection row, and its stray inductance is L δ1 , the connection row between the cathode of the first clamping diode D1 and the emitter of the first IGBT G1 is the second connection row, and its stray inductance is L δ2 , the connection row between the anode of the second clamping diode ...

Embodiment 3

[0087] Figure 10 It is a schematic structural diagram of a test device for a three-level IGBT module in Embodiment 3 of the present invention, referring to Figure 10 , the test device includes: the test switching circuit of the three-level IGBT module as described in the second embodiment, and the switch controller 101, the first control module 102, the first detection and calculation module 103, the second control module 104, the second Two detection and calculation module 105, the third control module 106, the third detection and calculation module 107 and calculation module 108, wherein,

[0088] The switch controller 101 is connected with the switch, and is used to control the switching connection between the fixed terminal of the switch and the three switching terminals;

[0089] The first control module 102 is configured to perform the following processing when the freewheeling reactor L is connected between the AC output terminal AC and the negative busbar terminal D...

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Abstract

The invention discloses a three-level IGBT module test method, a switching circuit and a device. The method comprises steps of constructing various conversion circuits through connecting a follow current electric reactor between an AC output terminal and a negative bus bar, between an AC output terminal and a positive bus bar, and between the AC output terminal and the middle point terminal of the bus bar, applying pulse signals on a corresponding IGBT, detecting voltage of a member in the conversion circuit and the current of the conversion circuit when the IGBT is turned on, and obtaining stray inductance of all connected bus bars according to a voltage-current relation of an electric reactor. The three-level IGBT module test method, the switching circuit and the device can simply and accurately test the stray inductance of connected bus bars, realizes the reverse recovery test of voltage and current and provide convenience to inferring the over-voltage level of the three-level IGBT module under various working conditions.

Description

technical field [0001] The invention relates to the technical field of wind power, in particular to a testing method, switching circuit and device for a three-level IGBT module. Background technique [0002] The three-level topology is an important part of the medium-voltage three-level converter. The on-off performance of the IGBT in the three-level IGBT (Insulated Gate Bipolar Transistor) module is important for the converter. influences. With the improvement of the turn-on and turn-off performance of the IGBT module, there will still be some adverse effects. For example, the turn-on current and turn-off current with a large slope will appear when the turn-on and turn-off are turned on. On the stray inductance, a large overvoltage will be induced, and the overvoltage and the bus voltage will be superimposed and act on the IGBT and the anti-parallel diode of the IGBT, which will cause overvoltage damage to the IGBT and the diode. Therefore, the test of the three-level The...

Claims

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Application Information

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IPC IPC(8): G01R27/26G01R19/00
Inventor 徐鹏姜鑫
Owner BEIJING GOLDWIND SCI & CREATION WINDPOWER EQUIP CO LTD
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