A fabrication method of ultraviolet optoelectronic device based on sm2o3/n-si heterostructure
A heterostructure, ultraviolet light technology, applied in electrical components, semiconductor devices, circuits, etc., can solve the problem of less research on ultraviolet detection devices, and achieve the effects of strong process controllability, sensitive response, and small dark current.
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Embodiment 1
[0028] Proceed as follows:
[0029] (1) Soak the N-type Si (100) silicon wafer in a solution of V(HF):V(H202)=l:5 for 15 seconds (to remove the natural oxide layer), and use acetone, ethanol and Each was ultrasonically cleaned with deionized water for 15 minutes, and dried under vacuum.
[0030] (2) Sm with a purity of 99.9% 2 0 3 The target is placed on the target stage of the RF magnetron sputtering system, the silicon (Si) substrate (half covered by the baffle) is fixed on the sample holder, and put into the vacuum chamber, Sm 2 0 3 The distance between the target and the substrate was set at 5 cm.
[0031] (3) Vacuum the cavity first, and wait for the ionization degree of the vacuum cavity to be about 4.0×10 -4 At Pa, argon (Ar) was introduced, the pressure in the vacuum chamber was adjusted to 2.1 Pa, then the RF power source was turned on, and the sputtering power was adjusted to 140 w, followed by pre-sputtering for 5 minutes, and then the baffle was opened for for...
Embodiment 2
[0035] Steps (1), (2) and (4) are all the same as in Example 1. Step (3) Vacuum the cavity first, and wait for the ionization degree of the vacuum cavity to be about 4.0×10 -4 At Pa, argon (Ar) was introduced, the pressure in the vacuum chamber was adjusted to 1.0 Pa, then the RF power source was turned on, and the sputtering power was adjusted to 140 w, followed by pre-sputtering for 5 minutes, and then the baffle was opened for formal sputtering . The sputtering time was set to 2 hours, and the RF power source was turned off after the end, and in-situ annealing was performed for 1 hour. Finally, after the RF magnetron sputtering system was cooled to room temperature, the substrate was taken out, and it was found that there was a layer of pale yellow deposits on the surface of the substrate.
[0036] (5) Apply a voltage across the electrodes to measure the photoelectric performance. The maximum voltage applied for V-I measurement is 2 volts, and the I-t curve is measured at...
Embodiment 3
[0038] Steps (1), (2) and (4) are all the same as in Example 1.
[0039] (3) Vacuum the cavity first, and wait for the ionization degree of the vacuum cavity to be about 4.0×10 -4 At Pa, argon (Ar) was introduced, the pressure in the vacuum chamber was adjusted to 5.1 Pa, then the RF power source was turned on, and the sputtering power was adjusted to 140 w, followed by pre-sputtering for 5 minutes, and then the baffle was opened for formal sputtering . The sputtering time was set to 2 hours, and the RF power source was turned off after the end, and in-situ annealing was performed for 1 hour. Finally, after the RF magnetron sputtering system was cooled to room temperature, the substrate was taken out, and it was found that there was a layer of pale yellow deposits on the surface of the substrate.
[0040] (5) Apply a voltage across the electrodes to measure the photoelectric performance. The maximum voltage applied for V-I measurement is 2 volts, and the I-t curve is measure...
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