Semiconductor device and formation method thereof

Abstract

The invention provides a semiconductor device and a formation method thereof. According to the invention, a non-volatile memory disposed on a storage unit zone and a transistor disposed in a periphery circuit zone are manufactured on a same semiconductor substrate at the same time. The density of the gate structure of the storage unit zone is greater than that of the gate structure of the periphery circuit zone. During the manufacturing process, the top part and a part of side walls of the gate structure of the storage unit zone and the peripheral circuit zone are exposed and gate structures containing metal silicide are formed through the exposed top part and the side walls, so that the contact resistance of a control grid of the non-volatile memory disposed in the storage unit zone and the contact resistance of a grid of the transistor in the peripheral circuit zone are reduced at the same time. Thus, the read-write current of the non-volatile memory and the read-write current of the transistor in the peripheral circuit zone are both reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device integrating a nonvolatile memory and peripheral circuits and a forming method thereof. Background technique [0002] Non-volatile memory is widely used as a storage element in devices such as read-only memory, flash memory, optical disk, and magnetic disk because it can still store data when no power is applied. [0003] When fabricating non-volatile memory, in addition to fabricating memory cells for storing data, it is also necessary to fabricate peripheral circuits for controlling storage in adjacent areas. [0004] In recent years, with the development of miniaturization, the critical size of non-volatile memory is getting smaller and smaller, which causes the non-volatile memory to require a large read and write current, and the above-mentioned large read and write current is easy to interfere with other semiconductor devices and N...

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Problems solved by technology

[0004] In recent years, with the development of miniaturization, the critical size of non-volatile memory is getting smaller and smaller, which causes the non-volatile memory to require a large read and write current, and the above-mentioned large read and write current is easy to interfere with other semiconductor devices and Not conducive to reducing energy consumption

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