Semiconductor device and method of forming the same

Abstract

A semiconductor device and a method for forming the same. The present invention simultaneously manufactures a nonvolatile memory located in the memory cell area and a transistor located in the peripheral circuit area on the same semiconductor substrate, wherein the density of the gate structure in the memory cell area is greater than the density of the gate structure in the peripheral circuit area , during the manufacturing process, the top and part of the sidewall of the gate structure in the memory cell area and the peripheral circuit area are exposed, and the gate structure including metal silicide is formed through the exposed top and sidewall, thereby reducing the The contact resistance of the gate of the non-volatile memory in the non-volatile memory area and the contact resistance of the gate of the transistor in the peripheral circuit area are controlled, thereby reducing the read and write current of the non-volatile memory and the read and write current of the transistor in the peripheral circuit area.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device integrating a nonvolatile memory and peripheral circuits and a forming method thereof. Background technique [0002] Non-volatile memory is widely used as a storage element in devices such as read-only memory, flash memory, optical disk, and magnetic disk because it can still store data when no power is applied. [0003] When fabricating non-volatile memory, in addition to fabricating memory cells for storing data, it is also necessary to fabricate peripheral circuits for controlling storage in adjacent areas. [0004] In recent years, with the development of miniaturization, the critical size of non-volatile memory is getting smaller and smaller, which causes the non-volatile memory to require a large read and write current, and the above-mentioned large read and write current is easy to interfere with other semiconductor devices and N...

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Problems solved by technology

[0004] In recent years, with the development of miniaturization, the critical size of non-volatile memory is getting smaller and smaller, which causes the non-volatile memory to require a large read and write current, and the above-mentioned large read and write current is easy to interfere with other semiconductor devices and Not conducive to reducing energy consumption

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