Reacting apparatus and method

Abstract

The invention discloses a reacting apparatus and method. The method mainly comprises the following steps of containing a preset amount of supercritical fluid inside an enclosed body unit; and cooperatively arranging an electrode unit inside the body unit. The electrode unit comprises a positive electrode member used for bearing a material to be slaked (or a material to be processed), and a negative electrode member. The positive electrode member and the negative electrode member are respectively electrically connected to the anode and the cathode of a power supply unit. In this way, the surface impurities of the material to be processed can be dissolved through the supercritical fluid. After the positive electrode member and the negative electrode member are electrified in a cooperative way, impurity atom stripping is performed on the material to be slaked (or the material to the processed) with the positive electrode member as a sacrificial anode. By means of the positive electrode member and the negative electrode member, the slaking reaction time of the material to be slaked in a low-temperature condition can be shortened. The uniformity can be increased. Or the material to be processed can be optimized in low-temperature conditions. The structure is more compact and purified. Even chemical reactions or chemical deposition reactions can be performed in low-temperature conditions.

Description

technical field [0001] The present invention relates to a processing device for materials, in particular to a device and method for accelerating aging, purification, optimization, chemical reaction or chemical deposition reaction of materials at low temperature. Background technique [0002] In recent years, due to the vigorous development of the electronics industry and the popularization of mobile devices, the continuous development of semiconductor technology has become an indisputable fact and has become an indispensable role. In the processing and production process of existing semiconductor products, most To deposit a thin film on a substrate by physical vapor deposition (PVD), arc physical vapor deposition (PVD), or chemical vapor deposition (Chemical Vaper Deposition) and other deposition methods, and then use lithography and etching (Etching) technology transfers the pattern to be formed onto the substrate and stacks the required three-dimensional structure (Archite...

AI Technical Summary

Problems solved by technology

However, because the glass transition temperature of all flexible substrates is very low, therefore, under the wave of flexible substrates in the future, the manufacturing will inevitably encounter layers of tests. A low-temperature chemical reaction chamber that can deposit high-quality thin films in just one step

[0003] In addition, all products made by injection molding still need to undergo a curing step after molding to make the bonding more complete. The traditional method is to place the product in an oven (Oven) and blow it with a fan to promote curing. However, the disadvantage of this method is that the curing time is longer and the uniformity is not good

[0004] Furthermore, currently all chemical reactions are to put the chemical agents involved in the reaction into the solution and then add catalysts and increase the temperature of the reaction chamber to accelerate the rate of the chemical reaction. Molecules must meet (collision) to react. In addition, the reaction process must abide by the chemical equilibrium, so it is difficult to complete the chemical reaction 100% in a short period of time. Moreover, after the chemical reaction is over, it still needs to be separated. The time-consuming process of solvent and purification has virtually increased the time and cost of the traditional chemical reaction synthesis method, so it is necessary to develop a technology that replaces the traditional chemical reaction in a new gaseous reaction chamber.

Images