Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

RF switch circuit

A technology of switching circuits and switches, applied in the direction of circuits, electronic switches, electrical components, etc.

Inactive Publication Date: 2015-11-04
NXP BV
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This arrangement improves the off-state of the switch, but at the expense of additional circuitry

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • RF switch circuit
  • RF switch circuit
  • RF switch circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] Figure 4 An RF switch circuit 400 is shown. A first resistor R1 may be connected between a drain of the NMOS transistor 10 and an output of a bias swap circuit 30 . The second resistor R2 may be connected between the source of the NMOS transistor 10 and the output of the bias switching circuit 30 . A decoupling capacitor C1 may be connected between the drain of the NMOS transistor 10 and the RF input 16 of the RF switch. A decoupling capacitor C2 may be connected between the source of NMOS transistor 10 and RF output 14 . A bootstrap gate resistor Rg may be connected between the control input 18 and the control terminal or gate of the NMOS 10 . The body bias resistor Rb may be connected to a bias voltage supply rail, which may be at ground potential.

[0042] In operation, the RF input 16 may be connected to an RF signal source with source impedance Rs. The RF signal source may be, for example, an RF power amplifier or an antenna. An RF switch RF output 14 may be...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A RF switching arrangement (400) is described including a bias swap circuit (30). The bias swap circuit switches the bias voltage dependent on the state of the RF switch. This improves the performance of the RF switch without requiring charge pump circuitry.

Description

technical field [0001] The present invention relates to radio frequency (RF) switching circuits for coupling antennas to RF transceivers. Background technique [0002] RF antenna switches are typically used to connect an RF transceiver to an antenna. An RF transceiver may typically have a power amplifier (PA) for transmitting output RF signals and a low noise amplifier (LNA) for receiving RF input signals. A common RF switch topology is Single Pole Double Throw (SPDT), which is a circuit structure with three RF ports. For example, a SPDT RF switch can be used in a wireless local area network (WLAN) front end in transmit mode to connect the PA output to the antenna and disconnect the LNA. In receive mode, the SPDT RF switch typically connects the antenna to the LNA input and disconnects the PA. Other antenna switching circuits can be used, for example, to connect a cellular or Bluetooth transceiver to the antenna. The RF antenna switch structure is typically on a die sepa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03K17/687
CPCH03K17/687H03K17/063H03K17/6874H03K17/693H03K2017/066H03K2217/0054
Inventor 吉安·霍赫扎德约瑟夫·雷内鲁斯·玛丽亚·伯格威特
Owner NXP BV
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com