Chemical vapor deposition furnace and chemical vapor deposition system

Abstract

The invention provides a chemical vapor deposition furnace comprising a material supplying device, two or more deposition devices and a collecting device. The material supplying device is used for containing solid raw materials and supplying gaseous state raw materials to the deposition chamber. The deposition devices are arranged above the raw material supplying device. The material collecting device is arranged above the deposition devices. The collecting device comprises a collecting box, a collecting box cover arranged on the top of the collecting box and an air outlet cylinder formed in the collecting box cover. The collecting box is an internally through cavity. The lower end of the air outlet cylinder is communicated with the cavity of the collecting box. According to the chemical vapor deposition furnace, unreacted gas and future and deposited compound particles directly enter the collecting box and enter a dust collecting system connected with the chemical vapor deposition furnace as much as possible, so that the load borne by the whole chemical vapor deposition furnace is lowered; meanwhile, the amount of dust generated due to a reaction and staying in the deposition device is reduced, and the possibility of blockage of the system is lowered; and correspondingly, the thickness of products is increased, and the conversion rate of products is increased.

Description

technical field [0001] The invention belongs to the technical field of chemical vapor deposition, and in particular relates to a chemical vapor deposition furnace and a chemical vapor deposition system. Background technique [0002] Chemical vapor deposition (Chemical vapor deposition, referred to as CVD) is a new technology for the preparation of inorganic materials developed in recent decades. Chemical vapor deposition is a process technology in which two or more gaseous substances react chemically on a substrate under vacuum conditions to form a solid substance that is deposited on the surface of the substrate to obtain a solid material. Chemical vapor deposition has been widely used to purify substances, develop new crystals, deposit various single crystal, polycrystalline or glassy inorganic thin film materials, infrared materials, etc. [0003] The chemical vapor deposition system includes a chemical vapor deposition furnace, a gas delivery system that provides gas to...

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Problems solved by technology

[0004] The chemical vapor deposition furnace used in the general chemical phase deposition system is basically a single deposition chamber. The chemical vapor deposition furnace with a single chamber is more convenient for small furnaces, but for a large number of industrial production, a single chamber The production cost of chemical vapor deposition furnace is relatively high, and it is inconvenient to operate

In addition, dust will be generated during the chemical vapor deposition process. If the dust cannot be properly and effectively treated, it will have a great impact on the performance of the product. In severe cases, it may lead to the termination of the entire chemical vapor deposition process.

[0005] Qingyuan Leading Materials Co., Ltd. applied for the patent "A Multi-chamber Graphite Deposition Device and Chemical Vapor Deposition Furnace" for the above problems, and proposed a solution to this problem. A dust collection mechanism is added above the deposition device in the deposition furnace, and the dust collection mechanism is provided with a dust collection container for collecting the dust escaping from the deposition chamber and for allowing the dust escaping from the deposition chamber to pass through and flow to the The dust collection channel of the dust collection container is described above. In the actual application process of the above chemical vapor deposition furnace, the added dust collection mechanism enables the dust generated during the chemical vapor deposition process to settle in the dust collection container when passing through the dust collection channel or after passing through. However, the above improvements increase the complexity of the chemical vapor deposition furnace of the deposition system, and at the same time, the products that are not deposited into the deposition chamber device enter the top of the deposition system device, increasing the probability of system blockage and reducing the deposition. The thickness of the product affects the performance of the product and reduces the conversion rate of the product

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