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Preparation method of ultra-thin luminescent glass and related luminescent device

A luminescent glass, ultra-thin technology, applied in the field of luminescent materials, can solve the problems of film warpage, unfavorable mass production, difficult process, etc., and achieves strong heat resistance and anti-aging performance, high flatness and uniformity, The effect of convenient and quick release

Active Publication Date: 2019-01-08
APPOTRONICS CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] At present, the preparation process of glass / ceramic-phosphor powder system thin layer is relatively complicated, and it is often prepared by melting casting method, atmospheric pressure sintering method, hot pressing sintering method, etc., and then undergoes tedious thinning, grinding, polishing and other processes. This secondary molding or even multiple molding process is not conducive to quality control, and it is not conducive to mass production
In particular, when preparing an ultra-thin wavelength conversion film (thickness <200 μm), the process is very difficult, and the problem of warping and cracking of the diaphragm is prone to occur, and the yield is low.

Method used

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  • Preparation method of ultra-thin luminescent glass and related luminescent device
  • Preparation method of ultra-thin luminescent glass and related luminescent device
  • Preparation method of ultra-thin luminescent glass and related luminescent device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Step A, obtaining the bearing / release layer 12: mixing the inorganic powder particles with the liquid phase organic carrier to make a slurry, thoroughly mixing by ball milling, brushing on the ceramic substrate 11, and drying at 120°C for 1 hour to obtain the thickness Bearing / release layer 12 at 50-300 μm, such as Figure 1a shown. Wherein, the ceramic substrate 11 can be one of alumina, zirconia, aluminum nitride and other substrates, which is characterized by a flat and smooth surface and can withstand a high temperature of 1000°C. Among them, inorganic powder particles can be selected from inorganic powders that do not decompose under high temperature, preferably white or nearly white powder particles such as aluminum oxide, titanium oxide, zirconium oxide, boron nitride, and aluminum nitride.

[0043] Step B, obtaining the glass raw slurry layer 13: after mixing and ball-milling the yellow phosphor particles, glass powder particles, and liquid-phase organic carrier...

Embodiment 2

[0049] Step A, obtaining the bearing / release layer 22: mixing alumina particles with a liquid-phase organic carrier to make a slurry, thoroughly mixing by ball milling, brushing on the aluminum nitride ceramic substrate 21, and drying at 120°C for 1 hour , get the thickness in 50-300 μ The load bearing / release layer 22 of m, such as Figure 2a shown.

[0050] Step B, obtain the yellow glass raw slurry layer 231: mix and ball-mill the yellow fluorescent powder particles, glass powder particles, and liquid-phase organic carrier to obtain the raw slurry, brush the slurry on the bearing / release layer 22, and pass After drying at 120° C. for 1 hour, a yellow glass green paste layer was obtained.

[0051] Step C includes step C' and step C''.

[0052] Step C', obtaining the yellow glass layer 231: sintering the above-mentioned yellow glass raw paste layer at a temperature of 800-950° C. for 1 hour to obtain a yellow glass layer 231 with a thickness of 50-300 μm, such as Figure ...

Embodiment 3

[0059] Step A and Step A', obtaining bearing / release layers 32a and 32b: mixing hexagonal boron nitride particles with a liquid-phase organic carrier to make a slurry, thoroughly mixing by ball milling, and brushing on aluminum nitride ceramic substrates 31a and 31b On top of that, after drying at 120°C for 1 hour, bearing / release layers 32a and 32b with a thickness of 50-300μm are obtained; Figure 3a shown.

[0060] Step B, obtain the glass raw slurry layer 33: mix and ball-mill the green phosphor particles, glass powder particles, and liquid-phase organic carrier to obtain the raw slurry, and brush the slurry on one of the bearing / release layers (for example 32a), after drying at 120°C for 1 hour, a glass green paste layer 33 with a thickness of 50-300 μm is obtained, such as Figure 3b shown. Among them, the green fluorescent inorganic phosphor powder can be selected from SrAl 2 o 4 :Eu 2+ , SrGa 2 S 4 :Eu 2+ , SrBaSiO 4 :Eu 2+ , CdS:In, CaS:Ce 3+ , Y 3 (Al, Gd...

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Abstract

The invention provides a preparation method for ultrathin light emitting glass. The preparation method comprises the following steps: A, coating a layer of slurry to the surface of a ceramic base plate and drying the ceramic base plate to obtain a carrying / stripping layer, wherein the slurry comprises inorganic powder and a first liquid phase organic carrier; B, coating light emitting glass raw slurry to the carrying / stripping layer and drying the carrying / stripping layer to obtain a glass raw slurry layer, wherein the light emitting glass raw slurry comprises first fluorescent powder, glass powder and a second liquid phase organic carrier; C, sintering the ceramic base plate comprising the glass raw slurry layer to obtain a glass layer; and D, stripping the glass layer from the carrying / stripping layer to obtain the ultrathin light emitting glass. The invention provides a brand new high quality process which is simple in process, low in cost and wide in applicability and can be used for large-scaled production. The obtained ultrathin light emitting glass has extremely high flatness and uniformity and is suitable for LED and LD light sources.

Description

technical field [0001] The invention relates to the field of luminescent materials, more specifically, to a preparation method of ultra-thin luminescent glass and a related luminescent device. Background technique [0002] In LED (Light Emitting Diode, Light Emitting Diode) and LD (Laser Diode, Laser Diode) light-emitting devices that excite phosphors to emit light, the wavelength conversion layer is often made into a thin layer (50-300 μm). The path for the excitation light to travel through this thin layer should be long enough so that the excitation light can be fully absorbed by the phosphor to emit as high-intensity light as possible; at the same time, the distance traveled by the excitation light in this thin layer should also be sufficient Short, so that the excitation light can partially penetrate, and the penetrated excitation light can be mixed with the stimulated light generated by the phosphor powder to form the required mixed light. Due to the subtle relationsh...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C4/12
Inventor 李乾田梓峰陈雨叁
Owner APPOTRONICS CORP LTD