Sensor and sensing method based on electrostatic induction

An electrostatic induction and sensor technology, applied in the sensor field, can solve the problems of not satisfying energy saving, difficult to work independently for a long time, and the application range of the sensing method is narrow, and achieve the effect of a wide range of applications.

Active Publication Date: 2015-11-25
BEIJING INST OF NANOENERGY & NANOSYST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to these limitations of the sensor power supply, the application range of the corresponding sensing method is narrow, and it cannot be applied in harsh environmental conditions, and it is difficult

Method used

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  • Sensor and sensing method based on electrostatic induction
  • Sensor and sensing method based on electrostatic induction
  • Sensor and sensing method based on electrostatic induction

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] The typical structure of the sensor based on electrostatic induction provided in this embodiment can be found in figure 1 , the sensor includes a sensing component for sensing the movement of the detected object, wherein the sensing component is composed of a first electrode layer 1 and a second electrode layer 2 matched therewith, the first electrode layer 1 and the The second electrode layer 2 is separated and electrically connected, and the detected object 4 can be separated from the first electrode layer 1 of the sensing component after contacting each other, such as figure 1 As shown by the middle arrow, the movement of the detected object 4 changes the potential of the charge carried by the detected object 4 on the first electrode layer 1, and the charge flows between the first electrode layer and the second electrode layer under the action of electrostatic induction. create a current. Connecting the detection device 3 between the first electrode layer 1 and the ...

Embodiment 2

[0085] In the sensor, a friction layer can also be included, and the first electrode layer of the sensing part is pasted on the lower surface of the friction layer, so that the first electrode layer does not directly contact the detected object or other objects, which can protect the sensing part of the sensor . The friction layer of the sensor can be charged or uncharged. Since the relative position of the friction layer and the first electrode layer remains unchanged, when the charged object to be detected moves relative to the first electrode layer, the friction layer will not It has an effect on the charge movement between the first electrode layer and the second electrode layer in the sensing component.

[0086] In this embodiment, the typical structure of the sensor can be found in Figure 6 The sensing components included in the sensor are formed by electrically connecting the first electrode layer 1 and the second electrode layer 2. The friction layer 5 is arranged on...

Embodiment 3

[0098] The sensor provided in Embodiment 1 and Embodiment 2 of the present invention may further include an isolation layer, which is used to isolate the first electrode layer and the second electrode layer of the sensing component, so that the two are separated and maintain a set relative position, and The sensing component can be insulated and isolated from other devices.

[0099] see Figure 7 The first electrode layer 1 and the second electrode layer 2 of the sensing component are all embedded in the isolation layer 6, so that the first electrode layer 1 and the second electrode layer 2 are separated and fixed in relative position, and at least the first electrode layer 1 The upper surface of the exposed isolation layer 6. The upper surface of the second electrode layer 2 may or may not expose the isolation layer 6 . The first electrode layer 1 and the second electrode layer 2 can be electrically connected through wires or conductive films.

[0100] In other embodiments...

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Abstract

The invention provides a sensor and a sensing method based on electrostatic induction. The sensor comprises a sensing component, wherein the sensing component is composed of a first electrode layer and a second electrode layer matched with the first electrode layer, and the first electrode layer and the second electrode layer are arranged at an interval and are electrically connected with each other. When a detected object moves relative to the first electrode layer of the sensing component, the electric potential of electric charge carried by the sensing component on the first electrode layer is enabled to be changed, and the electric charge flows between the first electrode layer and the second electrode layer under the effect of the electrostatic induction so as to form current. The sensor provided by the invention is simple in structure, and can sense movement of various materials of detected objects without being provided with an external power supply.

Description

technical field [0001] The invention relates to a sensor, in particular to a sensor and a sensing method for detecting the movement of objects by using electrostatic induction. Background technique [0002] Today, with the rapid development of microelectronics and material technology, a large number of new microelectronic devices with multiple functions and high integration have been developed continuously, and have shown unprecedented application prospects in various fields of people's daily life. Although there are many methods for sensing the movement of charged or uncharged objects, such as laser sensing and other sensing methods, the existing sensing methods all need to provide a matching power supply for the miniature sensor to drive the sensor to work. Generally speaking, the power supply of these miniature sensors comes directly or indirectly from batteries, which are not only large in size and heavy in weight, but also contain toxic chemical substances that are pote...

Claims

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Application Information

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IPC IPC(8): G01D5/14
Inventor 朱光王中林
Owner BEIJING INST OF NANOENERGY & NANOSYST
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