Manufacturing method of thin film transistor and manufacturing method of array substrate

Abstract

The invention discloses a manufacturing method of a thin film transistor and a manufacturing method of an array substrate, which relate to the technical field of display and can prevent a region serving as a channel in an active layer from being corroded in an active layer in a process of etching a source and a drain. The manufacturing method of the thin film transistor comprises the steps of forming an oxide semiconductor layer, and forming a pattern including an active layer through a composition process; forming a source / drain metal layer on the active layer, and forming a pattern including a source and a drain through a composition process, wherein an opening corresponding to the region serving as a channel in the active layer is formed between the source and the drain; the step of forming a pattern including a source and a drain through a composition process comprises: removing the source / drain metal layer at the opening by dry etching. The method is used for manufacturing the thin film transistor.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for manufacturing a thin film transistor and a method for manufacturing an array substrate. Background technique [0002] Currently, a commonly used liquid crystal display is a thin film transistor liquid crystal display. Thin film transistors can be divided into amorphous silicon thin film transistors, polysilicon thin film transistors, and oxide semiconductor thin film transistors according to different active layer materials. Among them, oxide semiconductor thin film transistors have been widely used in liquid crystal displays due to their advantages such as simple manufacturing process and high electron mobility. [0003] In the prior art, the manufacturing process of the oxide semiconductor thin film transistor includes: the first step, forming a gate metal layer, and forming a pattern including the gate through a patterning process; the second step, forming a gat...

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Problems solved by technology

[0004] The inventors of the present application have found that in the above fourth step, it is necessary to etch the source-drain metal layer with an acidic etchant to form a pattern including the source electrode and the drain electrode. During the etching process, due to the active layer The region used as the channel is directly exposed to the acidic etching solution, so that the acidic etching solution will corrode the region, thereby affecting the electrical characteristics of the oxide semiconductor thin film transistor

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