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Method of monolithically integrated optoelectrics

An optoelectronic component, integrated technology, applied in the direction of electrical components, electrical solid devices, circuits, etc., can solve problems such as increased packaging costs

Inactive Publication Date: 2015-11-25
贾斯汀·佩恩
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Each of these factors also increases packaging cost with each additional sensor and circuit element added to the module

Method used

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  • Method of monolithically integrated optoelectrics
  • Method of monolithically integrated optoelectrics
  • Method of monolithically integrated optoelectrics

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Experimental program
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Embodiment Construction

[0025] refer to figure 1 , shows the integrated sensor array and CMOS ASIC1, and important functional areas: CMOS circuit 4, C-sip-i-n photodiode 5, a-SIp-i-n photodiode 6 and III-V emitter 7. The silicon sensor chip is covered by a SiO2 cover glass 3 which is patterned to provide suitable clearance for the device elements bonded to the silicon substrate.

[0026] exist figure 2A cross-section of the completed sensor and circuit array is shown in . The cross-section shows the aforementioned device element gaps 10 patterned into the cover glass 3 and the interface 9 of the cover glass 3 bonded to the silicon-based sensor array 1 . The cover glass is patterned to provide the bonding pads on the silicon sensor chip with clear-outs 11 to facilitate proper connection to external circuitry, the gaps 11 being physically created during the wafer dicing process on which During the dicing process, the chips are severed and removed from the bonded wafer assembly.

[0027] In one or ...

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PUM

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Abstract

A monolithically integrated sensor is disclosed in the form of light detector(s), visible light emitter(s) and associated control circuit(s) monolithically integrated on a single silicon microchip. The detector structures consist of p-i-n photodiode structures, both diffused into and deposited on the surface of the silicon substrate. The emitter structures consist of III-V compound semiconductor hetero-epitaxial layers deposited on the surface of the silicon substrate. The control circuits are fabricated using traditional CMOS high volume manufacturing techniques. The sensor assembly is designed to be processed in a traditional CMOS wafer fab. The sensor assembly is further designed to be packaged at the wafer level.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to non-provisional US Provisional Application No. 61 / 708,601, filed October 1, 2012, which is hereby incorporated by reference for all purposes. technical field [0003] The described invention relates generally to silicon integrated optoelectronic components. More specifically, the described invention relates to ambient light sensing, solid state lighting (SSL), color sensing, proximity sensing, and motion detection. Background technique [0004] This patent relates to a proximity sensor, an ambient light sensor, and an RGB color sensor integrated on a single silicon chip. [0005] Proximity sensors, ambient light sensors, and RGB color sensors are commonly used in a range of consumer and industrial applications, especially in mobile handsets and solid-state lighting (SSL). These sensors enable, for example, intelligent management of adjusting the brightness of displays, user interfa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/14G01V8/10
CPCH01L27/144H01L27/14601H01L27/14618H01L2924/0002H01L2924/00
Inventor 贾斯汀·佩恩
Owner 贾斯汀·佩恩