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A resistive memory with planar structure and its preparation method

A resistive memory, planar structure technology, applied in electrical components and other directions, to achieve the effects of simple method, cost saving of raw materials, and high mobility characteristics

Inactive Publication Date: 2017-07-07
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] With the further scaling down of the feature size of semiconductor devices, traditional flash memory technology will reach the limit of size

Method used

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  • A resistive memory with planar structure and its preparation method
  • A resistive memory with planar structure and its preparation method
  • A resistive memory with planar structure and its preparation method

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Embodiment Construction

[0030] Embodiments of the present invention will be described in detail below with reference to the accompanying drawings, in which like elements are denoted by like reference numerals. The embodiments described below are exemplary, and in order to simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, these are only examples for the purpose of explaining the present invention and should not be construed as limiting the present invention. In addition, the present invention provides various specific examples of processes and materials, but the invention may be practiced without these specific details, as will be understood by those skilled in the art. Unless otherwise specified below, each part of the device can be implemented using processes and materials known in the art. Additionally, configurations described below in which a first feature is "on" a second feature may include embodiments where the f...

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Abstract

The invention belongs to the technical field of resistive memory, in particular to a resistive memory with a planar structure and a preparation method thereof. The resistive variable memory of the present invention has graphene electrodes formed at both ends of the resistive variable functional layer, and utilizes the high mobility characteristic of the graphene material to realize low power consumption operation of the resistive variable memory. The resistive memory with a planar structure is beneficial to the observation of the shape of the conductive filament, and is helpful for the mechanism research of the resistive memory. The present invention adopts the method of electric Joule heat fusing to obtain a gap of tens of nanometers near the middle of the graphene nanobelt, thereby forming a graphene electrode. Based on the characteristics of the lateral growth of the resistive functional layer on the graphene in the atomic layer deposition process, the resistive functional layer is formed. The method is simple, effective, saves the cost of raw materials, and can realize the adjustment of the size of the resistive memory device.

Description

technical field [0001] The invention belongs to the technical field of resistive memory, and in particular relates to a resistive memory with a planar structure and a preparation method thereof. Background technique [0002] With the further proportional reduction of the feature size of semiconductor devices, the traditional flash memory technology will reach the limit of size. In order to further improve the performance of devices, technicians began to actively explore new structures, new materials, and new processes. In recent years, various new types of non-volatile memories have been developed rapidly. Among them, resistive RAM (RRAM) is receiving more and more attention in the industry due to its advantages such as simple structure, strong shrinkability, high density, long data retention time, three-dimensional integration, and compatibility with complementary metal oxide semiconductor (CMOS) processes. Attention, it is considered to be very likely to replace static r...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 陈琳孙清清张卫
Owner FUDAN UNIV
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