A preparation method of photodetector based on thin film semiconductor-graphene heterojunction

Abstract

The invention provides a photoelectric detector preparation method based on thin-film semiconductor-graphene heterojunction. The method includes the steps of firstly, providing a substrate, and growing metal electrodes on the two sides of the surface of the substrate; secondly, growing a thin-film semiconductor layer on the surfaces of the substrate and the metal electrodes; thirdly, removing part of the thin-film semiconductor layer to expose the metal electrode on one side and part of the substrate; fourthly, forming a graphene layer on the surface of the whole structure; fifthly, removing the redundant graphene layer on the surface of the thin-film semiconductor layer, and making the rest of the graphene layer make contact with the thin-film semiconductor layer to form the heterojunction. The heterojunction formed by the thin-film semiconductor layer grown through the ALD technology and graphene is used as an active region of a photoelectric detector, the structure can be prepared on any semiconductors, insulators and even flexible substrates, silicon substrate integration can be easily achieved, and the process cost is effectively saved.

Description

technical field [0001] The invention belongs to the field of graphene manufacture, and relates to a method for preparing a graphene-based photodetector, in particular to a method for preparing a photodetector based on a thin film semiconductor-graphene heterojunction. Background technique [0002] Graphene is a carbon atom with sp 2 The hybridized orbitals form a hexagonal shape, which is a single-layer two-dimensional crystal arranged in a honeycomb lattice. In 2004, the team of Novoselov and Geim used the micromechanical exfoliation method to prepare graphene that can exist stably at room temperature, which set off an upsurge in graphene research. In recent years, a series of studies on the material preparation, transfer, characterization and application of graphene in semiconductor, chemical and other functional devices have been carried out one after another, and the progress is rapid. Due to the unique zero-gap energy band structure of graphene, the ultra-high electro...

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Problems solved by technology

[0006] In view of the above-mentioned shortcoming of the prior art, the object of the present invention is to provide a kind of photodetector preparation method based on thin film semiconductor-graphene heterojunction, for solving the problem when preparing semiconductor-graphene heterojunction in the prior art Graphene needs to be transferred to a fixed semiconductor substrate, resulting in difficulty in silicon-based integration and high cost

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