Novel-structurally single-photon detector
A single-photon detector, a new structure technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of practical process obstacles, weak signal, low operating temperature, etc., to increase the number of holes, improve the variation range, The effect of increased operating temperature
Inactive Publication Date: 2015-12-30
PEOPLES LIBERATION ARMY ORDNANCE ENG COLLEGE +1
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However, due to the weak signal caused by single photons, in order to suppress the influence of noise, this type of detector needs to work at an extremely low temperature, even below 4K, which is a major obstacle to its future practical application.
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[0019] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0020] It should be noted that implementations not shown or described in the accompanying drawings are forms known to those of ordinary skill in the art. Additionally, while illustrations of parameters including particular values may be provided herein, it should be understood that the parameters need not be exactly equal to the corresponding values, but rather may approximate the corresponding values within acceptable error margins or design constraints. In addition, the directional terms mentioned in the following embodiments only refer to the directions of the drawings. Accordingly, the directional terms are used to illustrate and not to limit the invention.
[0021] In an exemplary embodiment of the present inven...
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The invention provides a novel-structurally single-photon detector. A resonant tunneling diode is adopted as the main structure of the novel-structurally single-photon detector, an isolation layer, an n<+>-i-p<+> multiplication region and an absorption layer are sequentially formed above a double-barrier structure through epitaxial growth; forward bias is applied when the detector works, single photons enter from a collector; photo-induced electron-hole pairs are generated at the absorption layer; the photo-induced holes enter the multiplication region under the action of an electric field so as to be multiplied, and the multiplied photo-induced holes are accumulated at the isolation layer; and therefore, potential at two sides of the double-barrier structure can be changed, and tunneling current can be increased. According to the novel-structurally single-photon detector of the invention, the n<+>-i-p<+> multiplication region is adopted, and the thickness and doping concentration of an n<+> layer and a P<+> layer are adjusted, so that electric field strength in the multiplication region can be effectively adjusted, and therefore, flexible control on the multiple of the multiplication of the multiplication region can be realized; and since the multiplication region is additionally adopted, the peak current of the detector can be greatly improved. Compared with a single-photon detector without a multiplication region, the operating temperature of the novel-structurally single-photon detector of the invention can be greatly improved.
Description
technical field [0001] The invention relates to a single photon detector, in particular to a device structure design based on a resonant tunneling effect combined with a multiplication layer to realize single photon detection. Background technique [0002] As an important extremely weak signal detection technology, single photon detection has become one of the most active fields of international research in recent years due to its huge scientific research value and strategic position. etc. have broad application prospects. After years of development, there are many mature types of single-photon detectors, among which photomultiplier tubes and avalanche diodes are typical representatives. field has been widely used. However, with the continuous advancement of information technology in recent years, especially the rapid development of quantum information technology including quantum computing and quantum key distribution, the performance requirements for single photon detect...
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IPC IPC(8): H01L31/11H01L31/0352
Inventor 王广龙董宇倪海桥牛智川高凤岐乔中涛
Owner PEOPLES LIBERATION ARMY ORDNANCE ENG COLLEGE