Unlock instant, AI-driven research and patent intelligence for your innovation.

High electron mobility transistor

An electrode, semiconductor technology, applied in HEMT. Field, can solve the problem of small parasitic capacitance of the device

Inactive Publication Date: 2018-11-09
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF7 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The main purpose of this application is to provide a HEMT to solve the problem that the HEMT in the prior art cannot ensure that the parasitic capacitance of the device is small while enhancing the electric field

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High electron mobility transistor
  • High electron mobility transistor
  • High electron mobility transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0058] The structure of HEMT is as image 3 As shown, specifically, the HEMT includes a substrate 10, a nucleation layer 80, a first semiconductor layer 20, a space insertion layer 90, a second semiconductor layer 30, a cap layer 100, a gate 50, a source 41, and a drain 42 , Passivation layer 60, field plate 70.

[0059] Specifically, the aforementioned substrate 10 is a silicon carbide substrate, the nucleation layer 80 is an AlN layer with a thickness of 20 nm, the aforementioned first semiconductor layer 20 is a GaN layer with a thickness of 2 μm, and the space insertion layer 90 is an AlN layer with a thickness of 1 nm, the second semiconductor layer 30 is AlGaN with a thickness of 20 nm, the cap layer 100 is a GaN layer with a thickness of 2 nm, the passivation layer 60 has a groove, the passivation part is below the groove, and the thickness of the passivation part 61 is 10 nm. , the thickness of other positions of the passivation layer 60 is 120nm, the passivation laye...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a HEMT. The HEMT comprises a substrate, a first semiconductor layer and a second semiconductor layer, also comprises a grid electrode and a passivation layer, and further comprises a field plate, wherein the substrate, the first semiconductor layer and the second semiconductor layer are arranged in a stacked mode in sequence, the grid electrode and the passivation layer arelocated on the surface, away from the first semiconductor layer, of the second semiconductor layer, and the field plate is arranged on the surface, far away from the second semiconductor layer, of a passivation part; the band gap width of the material of the second semiconductor layer is larger than the band gap width of the material of the first semiconductor layer; the passivation layer comprises the passivation part which is located on one side of the grid electrode and is arranged on the surface of the second semiconductor layer; and the thickness of the passivation part is smaller than the thickness of the grid electrode. According to the HEMT, the working voltage of a device is increased, and meanwhile, the stray capacitance of the device is enabled to be relatively small.

Description

technical field [0001] The present application relates to the field of semiconductor devices, in particular, to a HEMT. Background technique [0002] GaN HEMT (High Electron Mobility Transistor, High Electron Mobility Transistor) is the core device of the power amplifier. With the expansion of the application field of the device, higher requirements are put forward for the working voltage of the device. In general, the field plate technology and Improve the material properties of the device to achieve the purpose of enhancing the electric field. [0003] The field plate is a kind of metal electrode. At present, the field plates used are mainly active field plates, grid field plates, and floating grids. The field plates mainly affect the redistribution of the electric field lines at the edge of the gate, reduce the electric field at the edge of the gate, and improve the performance of the device. Breakdown voltage, however, these field plate technologies increase the parasit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/40
CPCH01L29/402H01L29/778
Inventor 张昇魏珂张一川
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI