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A Novel Structure of Single Photon Detector

A single-photon detector, a new structure technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of practical process obstacles, weak signal, low operating temperature, etc., to increase the number of holes, improve the variation range, The effect of increased operating temperature

Inactive Publication Date: 2017-10-10
PEOPLES LIBERATION ARMY ORDNANCE ENG COLLEGE +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the weak signal caused by single photons, in order to suppress the influence of noise, this type of detector needs to work at an extremely low temperature, even below 4K, which is a major obstacle to its future practical application.

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  • A Novel Structure of Single Photon Detector
  • A Novel Structure of Single Photon Detector
  • A Novel Structure of Single Photon Detector

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Embodiment Construction

[0019] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0020] It should be noted that implementations not shown or described in the accompanying drawings are forms known to those of ordinary skill in the art. Additionally, while illustrations of parameters including particular values ​​may be provided herein, it should be understood that the parameters need not be exactly equal to the corresponding values, but rather may approximate the corresponding values ​​within acceptable error margins or design constraints. In addition, the directional terms mentioned in the following embodiments only refer to the directions of the drawings. Accordingly, the directional terms are used to illustrate and not to limit the invention.

[0021] In an exemplary embodiment of the present inven...

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Abstract

The invention provides a single photon detector with a novel structure, the main structure of which is a resonant tunneling diode, and an isolation layer, an n+-i-p+ multiplication region and an absorption layer are sequentially grown epitaxially on the double barrier structure. When the detector is working with a forward bias voltage, single photons are incident from the collector, and photogenerated electron-hole pairs are generated in the absorbing layer. The potential on both sides of the double barrier increases the tunneling current. The present invention adopts the design scheme of the n+-i-p+ multiplication region, and by adjusting the thickness and doping concentration of the n+ layer and the p+ layer, the electric field intensity inside the multiplication region can be effectively adjusted, thereby achieving flexible control of the multiplication factor of the multiplication region. By adding a multiplication region, the peak current of the detector is effectively increased. Compared with single-photon detectors without added multiplication regions, their operating temperatures can be greatly increased.

Description

technical field [0001] The invention relates to a single photon detector, in particular to a device structure design based on a resonant tunneling effect combined with a multiplication layer to realize single photon detection. Background technique [0002] As an important extremely weak signal detection technology, single photon detection has become one of the most active fields of international research in recent years due to its huge scientific research value and strategic position. etc. have broad application prospects. After years of development, there are many mature types of single-photon detectors, among which photomultiplier tubes and avalanche diodes are typical representatives. field has been widely used. However, with the continuous advancement of information technology in recent years, especially the rapid development of quantum information technology including quantum computing and quantum key distribution, the performance requirements for single photon detect...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/11H01L31/0352
Inventor 王广龙董宇倪海桥牛智川高凤岐乔中涛
Owner PEOPLES LIBERATION ARMY ORDNANCE ENG COLLEGE