Asymmetric Source-Drain Structure of III-V Mosfet Devices with Small Bandgap

Abstract

The invention discloses an asymmetric source-drain structure of a small-band-gap III-V MOSFET device, and belongs to the technical field of semiconductor devices. By introducing different highly-doped drain and source material structures to the source and the drain and introducing a field plate and an isolation layer spacer structure to the drain, under the condition of ensuring that there are sufficient carriers input to the source, the maximum electric field strength at the drain is decreased to increase the ionization effect and tunnel breakdown effect generation thresholds of the device and reduce the leakage current. Meanwhile, through the isolation layer spacer, the parasitic capacitance of the drain is reduced, and the frequency characteristic of the device is improved. With the structure, the cut-off voltage of the III-V MOSFET device is improved, the ionization effect and the tunnel breakdown effect are reduced, and the static leakage current and the corresponding static power consumption of the device are reduced. The frequency characteristic of the device is improved by reducing the parasitic capacitance.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and relates to a source electrode and a drain electrode structure of a semiconductor material with a small energy band gap. Background technique [0002] III-V small energy bandgap material devices are currently the main means to continuously improve the performance of semiconductor devices (saturation current greater than 3A / mm). The electronic technology based and cored on III-V semiconductor devices is the key technology to realize the integration of low power consumption and high frequency performance, and it is the key to realize information intelligence. The electron mobility of III-V small energy bandgap materials is much higher than that of silicon materials, which can achieve higher current and frequency response under the same bias. At the same time, under the same performance output, the required bias voltage is lower. Thereby realizing the effect of low power consumption. How...

AI Technical Summary

Problems solved by technology

Since III-V materials are small energy bandgap materials, ionization and tunnel breakdown effects are prone to occur in the on-state, which affects device leakage current, on / off ratio, cut-off voltage, and static power consumption, preventing III -V MOSFET further improves electrical performance while reducing device power consumption

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