Resistive random access memory cell working method

A resistive random and storage unit technology, applied in the direction of information storage, static memory, digital memory information, etc., can solve the problem of affecting bit writing, achieve the effect of reducing the impact and prolonging the moving time

Inactive Publication Date: 2016-01-06
WINBOND ELECTRONICS CORP
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, RRAM still has many challenges to overcome. For example, the filament path in the variable impedance element may be narrowed or disappeared under the influence of high temperature, thereby affecting the writing of bits.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resistive random access memory cell working method
  • Resistive random access memory cell working method
  • Resistive random access memory cell working method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] figure 1 It is a schematic circuit diagram of a resistive random access memory unit according to an embodiment of the present invention. Please refer to figure 1 , in this embodiment, the resistive random access memory unit 100 includes, for example, a variable impedance element VRE and a transistor M1 (ie, a switching element), wherein the variable impedance element VRE can be a voltage-controlled switching element or a current-controlled switching element. The variable impedance element VRE is coupled between the drain voltage VD and the drain of the transistor M1, that is, the variable impedance element VRE is connected in series with the transistor M1, the gate of the transistor receives a gate control voltage VG, and the source of the transistor Receive a ground voltage GND. Moreover, the variable impedance element VRE has a first electrode E1, a switching medium (switching medium) SM1 and a second electrode E2, wherein the material of the first electrode E1 is, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention discloses a resistive random access memory cell working method. The resistive random access memory cell comprises a variable impedance element and a switching element connected in series. The working method comprises the following steps: when the switching element is conductive, providing a write signal for the variable impedance element to set an impedance value of the variable impedance element; in a first period, setting the write signal as a first write voltage to transmit first electrical energy to the variable impedance element; and in a second period, transmitting second electrical energy to the variable impedance element by the write signal, wherein the second period is situated after the first period, the first electrical energy and the second electrical energy are larger than zero, and the second electrical energy is smaller than the first electrical energy.

Description

technical field [0001] The invention relates to a working method, and in particular to a working method of a resistive random access memory unit. Background technique [0002] Non-volatile memory has the advantage that the stored data will not disappear after power failure, so it is a necessary storage element for many electronic products to maintain normal operation. At present, resistive random access memory (resistive random access memory, RRAM) is a non-volatile memory actively developed in the industry, which has the advantages of low write operation voltage, short write and erase time, long storage time, non-destructive read , multi-state storage, simple structure, and small required area, etc., have great application potential in future personal computers and electronic devices. [0003] However, there are still many challenges to be overcome in the RRAM. For example, the filament path in the variable impedance element may be narrowed or disappeared under the influen...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C13/00
Inventor 何家骅廖绍憬王炳琨林孟弘
Owner WINBOND ELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap