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Method and system for intelligently refreshing dynamic random access memory

A technology of dynamic memory and memory, which is applied in the direction of static memory, digital memory information, information storage, etc., and can solve the problems of not being able to realize potential efficiency gains

Active Publication Date: 2018-02-02
QUALCOMM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the potential efficiency gains that can be achieved if DRAM refresh is controlled are not realized

Method used

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  • Method and system for intelligently refreshing dynamic random access memory
  • Method and system for intelligently refreshing dynamic random access memory
  • Method and system for intelligently refreshing dynamic random access memory

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Embodiment Construction

[0027] Various aspects will be described in detail with reference to the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts. References made to specific examples and implementations are for illustrative purposes, and are not intended to limit the scope of the invention or the claims.

[0028] The word "exemplary" is used herein to mean "serving as an example, instance, or instance." Any implementation described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other implementations.

[0029]As used herein, the term "computing device" refers to any or all of the following: cellular telephone, smart phone, personal or mobile multimedia player, personal data assistant (PDA), laptop computer, desktop computer, tablet computer, smartbook , Pocket Computers, Wireless Email Receivers, Cellular Phones with Multimedia Internet Capabilities, Televisions, S...

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PUM

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Abstract

The present invention provides methods and apparatus for refreshing a dynamic memory device (eg, DRAM) to eliminate unnecessary page refresh operations. A value in the lookup table for a page may indicate whether valid data including all zeros is present in the page. When the page includes valid data of all zeros, the lookup table value can be set such that refresh, memory read, write, and erase accesses to the page can be inhibited and valid values ​​can be returned. The second lookup table may contain a second value indicating whether the page has been accessed by a page read or write during the page refresh interval. When the second value indicates that a page access has not occurred, a page refresh may be performed according to a page refresh interval by issuing an ACT-PRE command pair and a page address.

Description

Background technique [0001] A dynamic random access memory (DRAM) is a memory device constructed from a collection of cells, each cell consisting of a transistor and a capacitor. DRAM cells are arranged in a matrix with rows and columns of cells. Each row of cells is called a "page," and the matrix of DRAM cells is called a "bank." Multiple groups are combined to form a DRAM device. DRAM operates to retain information in individual cells by storing charge in capacitors and using transistors as access switches. The capacitor may be charged or discharged corresponding to a stored value such as 1 or 0. Writing a "0" or "1" to a location can be considered a "refresh", where the value is held for the duration of the refresh cycle in which it is written. For example, if a write is made to a page, that page can be considered refreshed for the duration of the refresh cycle. [0002] Over time, the capacitors eventually "leak," or lose their charge, requiring the DRAM to be period...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/406G11C11/4072G11C7/04G06F13/16
CPCG11C11/40622G11C7/04G11C11/40603G11C11/40611G11C11/40626G11C11/4072
Inventor H-J·罗D·全
Owner QUALCOMM INC