A kind of gan device and its manufacturing method

Abstract

The invention relates to the manufacturing field of semiconductors, and provides a GaN device and a manufacturing method thereof. The GaN device comprises a substrate, an AlN nucleating layer, a GaN transition layer, an AlN isolating layer, an AlGaN barrier layer and a GaN cap layer which are sequentially arranged form bottom to top, wherein a grid, a source and a drain are arranged in a device region on the GaN cap layer, grooves are formed in detection regions on both sides of the device region of the GaN cap layer, the grooves extend from the surface of the GaN cap layer to the AlN nucleating layer in an embedded manner, and an electrode is formed on the AlN nucleating layer in each groove. The GaN device and the manufacturing method thereof achieve the technical effect of monitoring operating state of the GaN device without affecting the operating state of the GaN device.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a GaN device and a manufacturing method thereof. Background technique [0002] As a typical representative of wide bandgap semiconductors, GaN has wider bandgap width, higher saturation electron drift velocity, higher critical breakdown electric field strength, better thermal conductivity, and more importantly, GaN and AlGaN can form AlGaN / GaN heterojunction is convenient for making HEMT devices. In fact, GaN, AlN and Al X Ga 1-X N is a piezoelectric material. [0003] In the actual work of GaN devices, the shape of the AlGaN depletion layer in GaN-based HEML is as follows figure 1 shown. The electric field lines in the depletion layer directly below the gate are straight, and at the edge of the gate, the boundary of the depletion layer bends, and the curvature is large, causing the electric field lines to concentrate toward the drain edge of the gate. [0004] In ...

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Problems solved by technology

[0004] In actual use, whether a GaN HEMT is a microwave radio frequency amplifier device or a power electronic device, the gate is at the edge of the drain end. Due to the inverse piezoelectric characteristics of GaN, a large electric field strength will cause a large stress. In severe cases It will lead to the generation of cracks, making GaN HEMT devices fail

, in order to avoid the failure of the GaN HEMT device, the GaN HEMT device can be monitored, but the sensor cannot be directly fabricated on the GaN:, because it is close to the 2DEG channel, it affects the normal working state of the GaN HEMT

[0005] Therefore, when making electrodes in the GaN layer in the prior art, there is a technical problem that affects the working state of the GaN HEMT device

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