Semiconductor device including co-connected vertical cell strings
A technology of semiconductor, vertical part, applied in the field of three-dimensional semiconductor memory device and its manufacturing, which can solve the problems of expensive and difficult
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no. 1 example
[0076] Figure 1A with Figure 1B is a perspective view and a plan view showing a semiconductor device according to a first embodiment of the inventive concept, Figure 1C is along Figure 1B The cross-sectional view taken along the line II'. also, Figure 1D is a schematic circuit diagram showing a cell array of a semiconductor device according to a first embodiment of the inventive concept.
[0077] refer to Figure 1A to Figure 1C, the semiconductor device may include a bit line BL on the substrate 100, a gate structure GS between the substrate 100 and the bit line BL, a common source line CSL between the gate structure GS and the bit line BL, and a pass through the gate Channel structure CS of structure GS. Each of the channel structures CS may be configured to connect a corresponding one of the bit lines BL to the common source line CSL. The semiconductor device may further include a contact plug PLG disposed between the gate structure GS and the bit line BL.
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no. 2 example
[0114] Figure 7A with Figure 7B is a perspective view and a plan view showing a semiconductor device according to a second embodiment of the inventive concept, Figure 7C is along Figure 7B A cross-sectional view taken along the line II'. also, Figure 7D is a schematic circuit diagram showing a cell array of a semiconductor device according to a second embodiment of the inventive concept. In the following Figure 7A to Figure 7D In the description of , for the sake of brevity, previously referred to Figure 1A to Figure 1D Described elements may be denoted by similar or identical reference numerals without repeating their repeated descriptions.
[0115] refer to Figure 7A to Figure 7C , the semiconductor device may include a bit line BL on the substrate 100, a gate structure GS between the substrate 100 and the bit line BL, a common source line CSL between the gate structure GS and the bit line BL, and a pass through the gate Channel structure CS of structure GS. ...
no. 3 example
[0168] Figure 15A with Figure 15B is a perspective view and a plan view showing a semiconductor device according to a third embodiment of the inventive concept, Figure 15C is along Figure 15B A cross-sectional view taken along the line II'. in addition, Figure 15D is a schematic circuit diagram showing a cell array of a semiconductor device according to a third embodiment of the inventive concept. In the following Figure 15A to Figure 15D In the description of , for the sake of brevity, previously referred to Figure 1A to Figure 1D Described elements may be denoted by similar or identical reference numerals without repeating their repeated descriptions.
[0169] refer to Figure 15A to Figure 15C , the semiconductor device may include a bit line BL on the substrate 100, a gate structure GS between the substrate 100 and the bit line BL, a common source line CSL between the gate structure GS and the bit line BL, and a pass through the gate Channel structure CS of ...
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