Film transistor, array substrate, manufacturing method and display device
A thin film transistor and array substrate technology, applied in the field of display devices including the array substrate, can solve problems such as bound carrier movement, and achieve the effects of high carrier mobility, good device electrical stability, and device size reduction
Inactive Publication Date: 2016-02-03
BOE TECH GRP CO LTD
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[0003] However, in the above-mentioned active layer of superlattice structure, the defect states at the interface between different semiconductor layers will constrain the movement of carriers, thus limiting the further improvement of carrier mobility to a certain extent.
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[0045] Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to illustrate and explain the present invention, and are not intended to limit the present invention.
[0046] In the present invention, the orientation words "up" and "down" both refer to Figure 1 to Figure 6 "Up" and "Down" directions.
[0047] As an aspect of the present invention, such as figure 1 As shown, a thin film transistor is provided, the thin film transistor includes an active layer 100, wherein the active layer 100 has a superlattice structure, and the active layer 100 includes a plurality of semiconductor layers and at least one insulating layer, the The semiconductor layer and the insulating layer are alternately stacked, and the thicknesses of the semiconductor layer and the insulating layer are both on the order of nanometers, and the semicond...
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The invention provides a film transistor. The film transistor comprises an active layer, wherein the active layer is in a superlattice structure and comprises multiple semiconductor layers and at least one insulation layer, the semiconductor layers and the insulation layers are laminated alternately, thickness of the semiconductor layers and the insulation layers is respectively a nanometer magnitude, and the semiconductor layers are prepared by metal-oxide semiconductors or metal nitrogen oxide semiconductors. The invention further provides an array substrate, a manufacturing method and a display device. The film transistor has excellent electrical characteristics and reliability, and higher carrier mobility, lower off-state leakage current and better threshold voltage stability are realized.
Description
technical field [0001] The present invention relates to the field of display devices, in particular to a thin film transistor, an array substrate including the thin film transistor, a manufacturing method for forming the array substrate, and a display device including the array substrate. Background technique [0002] In order to increase the mobility of carriers in the active layer of the thin film transistor, the active layer of the thin film transistor can be made of a superlattice material. There is a kind of thin film transistor in the prior art, the active layer of the thin film transistor is a superlattice material formed by periodically stacking three semiconductor layers, this kind of thin film transistor has higher carrier mobility and better stability. [0003] However, in the above-mentioned active layer of the superlattice structure, the defect states at the interface between different semiconductor layers will constrain the movement of carriers, thus limiting ...
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IPC IPC(8): H01L29/786H01L29/15H01L27/12H01L21/77
CPCH01L27/1225H01L27/127H01L29/152H01L29/7869H01L29/78648H01L29/66969H01L29/78696H01L29/158H01L29/24H01L29/41733H01L29/42384H01L29/4908
Inventor 朱夏明
Owner BOE TECH GRP CO LTD