A method of manufacturing a light-emitting diode with high luminous efficiency
A technology for light-emitting diodes and a manufacturing method, which is applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as treating the symptoms rather than the root causes, and achieve the effects of improving crystal quality, simplifying process flow, and improving current expansion effect and reliability.
Active Publication Date: 2017-10-31
XIAMEN CHANGELIGHT CO LTD
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Problems solved by technology
[0004] However, the above technologies are all palliatives, not the root cause. As the application of LED luminous power needs to be further improved, the above technologies will face technical bottlenecks again under the use of higher working current.
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[0023] The corresponding light-emitting diode of the present invention can be formed by adopting the following manufacturing method:
[0024] 1. Provide an epitaxial substrate. After standard masking and photolithography process, ICP etching is used to form different surface topography on the substrate surface. The PSS topography of the substrate surface topography in the p-electrode setting area is higher than that in other areas It is large and presents a certain gradual decreasing law. Such as figure 2 shown.
[0025] 2. Use MOCVD epitaxial equipment to sequentially form a buffer layer, an unintentionally doped layer, an n-type conductive layer (composed of four n-type conductive layers and three layers of current blocking layers), an active region, and an electron blocking layer on the epitaxial substrate. layer, p-type conductive layer, p-type ohmic contact layer.
[0026] 3. The size of the PSS surface topography passing through the substrate gradually increases in t...
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The invention discloses a manufacturing method for a light-emitting diode with high luminous efficiency, and relates to the technical field of light-emitting diode production. According to the invention, a dislocation line gathering region is disposed below a P-type electrode, thereby improving the crystal quality of the light-emitting diode, effectively improving the internal quantum efficiency of the light-emitting diode, and enabling the dislocation line gathering region not to cause adverse impact on the light-emitting diode through the subsequent design and manufacturing of a dislocation blocking layer and the P-type electrode. The method employs the P-type and N-type arrangement of electrode manufacturing regions at the same time, employs ICP to etch P-type and N-type electrode manufacturing regions at the same time, and effectively simplifies the technological flow and complexity. According to the invention, the dislocation blocking layer is manufactured below the P-type electrode, thereby achieving the effective insulation of bottom P and N of the P-type electrode, and improves the current extension effect and reliability of the light-emitting diode.
Description
technical field [0001] The invention relates to the technical field of production of light-emitting diodes. Background technique [0002] In recent years, light-emitting diodes have developed rapidly, which is closely related to the development of semiconductor optoelectronic technology and new lighting source technology. With the continuous expansion of LED application fields, people have put forward higher and higher requirements for the performance of LED chips. It is necessary to continuously improve the luminous power of LEDs. [0003] With the widespread application of high-power LEDs, the luminous efficiency and reliability of LEDs are reduced due to inherent defects. Improving the epitaxial crystal quality of LEDs and designing new chip structures has become an important way to solve this problem. At present, the internal quantum efficiency under high current is mainly improved by improving the quality of the epitaxial crystal or using better current expansion mat...
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IPC IPC(8): H01L33/64H01L33/52
CPCH01L33/005H01L33/52H01L33/64
Inventor 林志伟陈凯轩张永卓祥景姜伟方天足陈亮
Owner XIAMEN CHANGELIGHT CO LTD