Unlock instant, AI-driven research and patent intelligence for your innovation.

Phase change spinning nonvolatile storage unit

A non-volatile storage and phase change technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of asymmetric read and write performance, disadvantages of write operation performance and power consumption, limited number of write times, etc., to improve read and write performance, ease of large-scale production and commercial application, and the effect of reducing power consumption

Active Publication Date: 2016-02-24
TSINGHUA UNIV
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although phase change memory can provide higher scalability than traditional DRAM, it has problems such as limited write times and asymmetric read and write performance.
Moreover, due to the relatively high delay and energy required to change the state of phase change memory, it is at a disadvantage in terms of write operation performance and power consumption.
Although magnetic memory has a high degree of integration, it has the problem of high read and write delays, and the materials of current magnetic memory are relatively complicated, resulting in high cost of current magnetic memory.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Phase change spinning nonvolatile storage unit
  • Phase change spinning nonvolatile storage unit
  • Phase change spinning nonvolatile storage unit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The phase change spin nonvolatile memory unit provided by the embodiment of the present invention will be further described below.

[0024] see figure 1 , the first embodiment of the present invention provides a phase-change spin non-volatile memory unit 10, the phase-change spin non-volatile memory unit 10 is a magnetic memory unit, including a magnetic pinned layer 102, a spacer layer 104, a magnetic free layer 106, a first electrode 108, and a second electrode 110, wherein the magnetic pinned layer 102, the spacer layer 104, and the magnetic free layer 106 are sequentially stacked, and the first electrode 108 is set on the surface of the magnetic pinned layer 102, so The second electrode 110 is disposed on the surface of the magnetic free layer 106, and the material of the spacer layer 104 is a phase change material.

[0025] The magnetic pinned layer 102 , the spacer layer 104 and the magnetic free layer 106 are sequentially stacked. Specifically, the spacer layer...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a phase change spinning nonvolatile storage unit. The phase change spinning nonvolatile storage unit comprises a magnetic fixed layer, a spacing layer, a magnetic free layer, a first electrode and a second electrode, wherein the magnetic fixed layer, the spacing layer and the magnetic free layer are sequentially laminated, the first electrode is arranged on the magnetic fixed layer, the second electrode is arranged on the magnetic free layer, and the material of the spacing layer is a phase change material.

Description

[0001] This case is a divisional application filed by the applicant on June 8, 2015 with the application number 201510307513.1 and the name "Phase Change Spin Non-Volatile Memory Unit". technical field [0002] The invention relates to a phase change spin nonvolatile memory unit. Background technique [0003] Memory is one of the important components in the information industry. How to develop a new low-cost, high-density, fast-speed, and long-life non-volatile memory has always been an important direction of information industry research. [0004] Currently commonly used non-volatile memories include phase-change memories and magnetic memories. Phase change memory is a kind of non-magnetic memory, which uses the change of resistance between the amorphous state (high resistance state) and the crystalline state (low resistance state) of the phase change material for data storage during the storage process. Although phase change memory can provide higher scalability than trad...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L27/24
CPCH10B63/00H10N70/231
Inventor 施路平李黄龙张子阳
Owner TSINGHUA UNIV