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Reflection electrode structural member and ion source

A technology for reflecting electrodes and structural parts, applied in the field of ion sources, can solve the problems of reduced plasma generation efficiency, reduced electron reflection efficiency, etc., and achieve the effects of improving metal aluminum ionization efficiency, compact reflecting electrode structural parts, and increasing ion content

Active Publication Date: 2016-03-09
BEIJING SHUOKE ZHONGKEXIN ELECTRONICS EQUIP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Considering the limited space to be arranged in the plasma arc chamber, the size of the sputtered member is limited, and the size of the reflective electrode installed in the sputtered member is also limited, resulting in reduced electron reflection efficiency and plasma generation efficiency. reduce

Method used

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  • Reflection electrode structural member and ion source
  • Reflection electrode structural member and ion source
  • Reflection electrode structural member and ion source

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Embodiment Construction

[0024] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0025] Figure 1 to Figure 2 It shows an embodiment of a reflective electrode structure of the present invention, including an opposing reflective electrode 3 made of a high melting point metal material and a sputtered part 4 made of a low melting point metal material. The front end of the opposing reflecting electrode 3 is provided with The installation groove 31 , the object to be sputtered 4 is embedded in the installation groove 31 , and is adjacent to the inner wall of the installation groove 31 . The sputtered part 4 is embedded in the installation groove 31, the area of ​​the sputtered part 4 can be directly increased by increasing the size of the installation groove 31, and the ion content in the ion beam can be increased. This structure does not require other auxiliary parts to be installed, simplifying the The structure is ...

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Abstract

The invention discloses a reflection electrode structural member and an ion source. The reflection electrode structural member comprises an opposite reflection electrode made of a high-melting metal material and a sputtered member made of a low-melting metal material. An installation groove is formed in the front end of the opposite reflection electrode. The sputtered member is embedded in the installation groove and is adjacent to the inner wall of the installation groove. According to the invention, the sputtered member is embedded in the installation groove, and by increasing the size of the installation groove, the area of the sputtered member is directly increased, so that the ion content in ion beams is increased; in addition, other auxiliary parts are not needed, the structure is simplified, and the sputtered member can be replaced to compensate the consumption of the same kind of metal material in the sputtered process and can also be replaced by a corresponding metal material to the required type of ion beams, so that the adaptability is good.

Description

technical field [0001] The invention relates to the technical field of ion sources, in particular to a reflective electrode structure and an ion source. Background technique [0002] In recent years, a technology has been developed. In the arc chamber of the ion source, a cathode is used to turn the source gas into a plasma, and then the material to be sputtered is sputtered by the plasma to obtain an ion beam containing the desired ion species. In the prior art, the member to be sputtered is cylindrical, and the inside of the cylinder is a through hole, and the reflective electrode is set in the through hole of the member to be sputtered, and the member to be sputtered is fixedly installed on the reflective electrode. Considering the limited space to be arranged in the plasma arc chamber, the size of the sputtered member is limited, and the size of the reflective electrode installed in the sputtered member is also limited, resulting in reduced electron reflection efficiency...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J27/20H01J27/22
CPCH01J27/205H01J27/22
Inventor 彭立波袁卫华孙雪平易文杰
Owner BEIJING SHUOKE ZHONGKEXIN ELECTRONICS EQUIP CO LTD
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