Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Reaction chamber temperature zone control system

A technology of control system and temperature partition, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as thermal process effectiveness of annealing process, different degrees of heating of silicon wafers, warping and deformation of silicon wafers, etc.

Inactive Publication Date: 2016-03-09
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the specific process, the most obvious situation is that because the temperature of the exhaust port in the reaction chamber is lower than that of other areas, the heating power of the outer edge of the silicon wafer will be the same, but the actual silicon wafer is heated differently, resulting in Unqualified process parameters, even silicon wafer warpage and other problems
Secondly, the uneven deposition of the front layer will also affect the thermal process effectiveness of the annealing process.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Reaction chamber temperature zone control system
  • Reaction chamber temperature zone control system
  • Reaction chamber temperature zone control system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] In order to facilitate the implementation of the present invention by those having ordinary knowledge in the field to which the present invention pertains, examples of the present invention will be described in detail with reference to the accompanying drawings shown below. However, the present invention can be implemented in various forms and is not limited to the examples described here. In order to more clearly describe the present invention, parts irrelevant to the description in the drawings are omitted; and, throughout the specification, similar drawing symbols are assigned to similar parts.

[0026] Throughout the description of the present invention, the "connection" of one part to another part includes not only "direct connection" but also "electrical connection" through other components.

[0027] Throughout the description of the present invention, a certain part is located "above" another part, including not only a state where a certain part is in contact wit...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of semiconductor devices, particularly to a reaction chamber temperature zone control system. A sealed reaction chamber is divided into a plurality of zones; thermometers can sense the temperatures of different zones in the sealed reaction chamber; a temperature controller is connected to the thermometers; the temperature controller is internally provided with temperature control software; the temperature control software calculates temperature compensations of the corresponding zones in the sealed reaction chamber, sensed by the thermometers, and heats the zones, corresponding to the temperature compensations, in the sealed reaction chamber according to the temperature compensations. According to the technical scheme of the invention, the sealed reaction chamber is divided into the plurality of zones, the temperature compensations of the zones can be calculated respectively, and the corresponding zones can be heated according to the temperature compensations, in such a way that the problems that a gas inlet port and a gas exhaust port of the sealed reaction chamber and other zones of the sealed reaction chamber have different temperatures after being heated, and uneven heating of a silicon chip depositing material is due to uneven thickness of the silicon chip depositing material, can be solved; and the uniformity and the stability of a hot-working technology effect can be improved, and the purpose of controlling the temperature can be effectively achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor equipment, in particular to a reaction chamber temperature zone control system. Background technique [0002] As a common semiconductor process technology, rapid thermal processing is widely used. Its purpose is to place the silicon wafer under the required temperature and environmental conditions for a certain period of time, and use thermal energy to promote the rearrangement of the lattice positions of the atoms in the silicon wafer, so as to reduce lattice defects and activate doping elements. With the rapid improvement of the performance of semiconductor devices, the requirements for the rapid thermal annealing process are also getting higher and higher. Today's rapid thermal annealing process places stringent requirements on the heating accuracy and repeatability of each silicon wafer. In the specific process, the most obvious situation is that because the temperature of the exhaust ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/67
CPCH01L21/67098
Inventor 李贇佳赖朝荣苏俊铭
Owner SHANGHAI HUALI MICROELECTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products