Reaction chamber temperature zone control system

Abstract

The invention relates to the technical field of semiconductor devices, particularly to a reaction chamber temperature zone control system. A sealed reaction chamber is divided into a plurality of zones; thermometers can sense the temperatures of different zones in the sealed reaction chamber; a temperature controller is connected to the thermometers; the temperature controller is internally provided with temperature control software; the temperature control software calculates temperature compensations of the corresponding zones in the sealed reaction chamber, sensed by the thermometers, and heats the zones, corresponding to the temperature compensations, in the sealed reaction chamber according to the temperature compensations. According to the technical scheme of the invention, the sealed reaction chamber is divided into the plurality of zones, the temperature compensations of the zones can be calculated respectively, and the corresponding zones can be heated according to the temperature compensations, in such a way that the problems that a gas inlet port and a gas exhaust port of the sealed reaction chamber and other zones of the sealed reaction chamber have different temperatures after being heated, and uneven heating of a silicon chip depositing material is due to uneven thickness of the silicon chip depositing material, can be solved; and the uniformity and the stability of a hot-working technology effect can be improved, and the purpose of controlling the temperature can be effectively achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductor equipment, in particular to a reaction chamber temperature zone control system. Background technique [0002] As a common semiconductor process technology, rapid thermal processing is widely used. Its purpose is to place the silicon wafer under the required temperature and environmental conditions for a certain period of time, and use thermal energy to promote the rearrangement of the lattice positions of the atoms in the silicon wafer, so as to reduce lattice defects and activate doping elements. With the rapid improvement of the performance of semiconductor devices, the requirements for the rapid thermal annealing process are also getting higher and higher. Today's rapid thermal annealing process places stringent requirements on the heating accuracy and repeatability of each silicon wafer. In the specific process, the most obvious situation is that because the temperature of the exhaust ...

AI Technical Summary

Problems solved by technology

In the specific process, the most obvious situation is that because the temperature of the exhaust port in the reaction chamber is lower than that of other areas, the heating power of the outer edge of the silicon wafer will be the same, but the actual silicon wafer is heated differently, resulting in Unqualified process parameters, even silicon wafer warpage and other problems

Secondly, the uneven deposition of the front layer will also affect the thermal process effectiveness of the annealing process.

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