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Semiconductor Device

A semiconductor, conductive type technology, applied in semiconductor devices, electric solid state devices, electrical components, etc., can solve the problems of high-speed switching of difficult diodes, high hole injection, etc.

Inactive Publication Date: 2016-03-23
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in a reverse conducting IGBT, the injection of holes due to the impurity element introduced into the p-type base region of the IGBT increases, so it may be difficult to achieve high-speed switching of the diode.

Method used

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Experimental program
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Effect test

no. 1 Embodiment approach

[0023] figure 1 (a) is a schematic sectional view showing the semiconductor device of the first embodiment, figure 1 (b) is a schematic plan view showing the semiconductor device of the first embodiment.

[0024] figure 1 In (a), it means figure 1 (b) A-A' line section, figure 1 In (b), it means figure 1 The state when the BB' line section of (a) is planarly viewed. In addition, in the drawings shown below, three-dimensional coordinates (XYZ coordinate system) are introduced in order to show the direction of the semiconductor device.

[0025] The semiconductor device 1 of the first embodiment is a semiconductor device having an upper and lower electrode structure. The semiconductor device 1 includes an electrode 10 (first electrode), an electrode 11 (second electrode), an IGBT region 101 (first element region), an FWD (FreeWheeling Diode, freewheeling diode) region 102 (second element region), and an isolation region 103 . In the semiconductor device 1 , the IGBT...

no. 2 Embodiment approach

[0120] Figure 8 It is a schematic sectional view showing the semiconductor device of the second embodiment.

[0121] In the semiconductor device 2 of the second embodiment, a plurality of p + type semiconductor region 33 (ninth semiconductor region).

[0122] The semiconductor region 33 is provided between the electrode 11 and the semiconductor region 35 . The impurity concentration of the semiconductor region 33 is higher than the impurity concentration of the semiconductor region 35 . That is, the semiconductor region 33 becomes a region with a lower resistance to holes than the semiconductor region 35 . Therefore, at the time of recovery, the holes existing in the separation region 103 are efficiently discharged to the electrode 11 via the semiconductor region 33 . Accordingly, the recovery speed of the semiconductor device 2 becomes faster than the recovery speed of the semiconductor device 1 . In addition, since the injection amount of holes can be increased during ...

no. 3 Embodiment approach

[0124] Figure 9 It is a schematic sectional view showing the semiconductor device of the third embodiment.

[0125] In the semiconductor device 3 of the third embodiment, a plurality of n + type semiconductor region 27 (the tenth semiconductor region).

[0126] The semiconductor region 27 is provided between the third portion 20 c of the semiconductor region 20 and the electrode 10 . The impurity concentration of the semiconductor region 27 is higher than the impurity concentration of the semiconductor region 20 . Thus, from n + The injection amount of electrons flowing from the FWD region 102 to the FWD region 102 increases. As a result, the on-voltage of the FWD region 102 of the semiconductor device 3 is lower than the on-voltage of the semiconductor device 1 .

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PUM

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Abstract

According to one embodiment, a semiconductor device includes first and second electrodes, and a first semiconductor region provided between the first and second electrodes. A first element region includes a second semiconductor region provided between the first semiconductor region and the first electrode, a third semiconductor region provided between the first semiconductor region and the second electrode, a fourth semiconductor region provided between the third semiconductor region and the second electrode, and a third electrode provided in the first, third and fourth semiconductor regions. A second element region includes a fifth semiconductor region provided between the first semiconductor region and the first electrode, and a sixth semiconductor region provided between the first semiconductor region and the second electrode. An isolation region includes a seventh semiconductor region provided between the first semiconductor region and the second electrode. The isolation region is positioned between the first and second element regions.

Description

[0001] related application [0002] This application enjoys the priority of the basic application based on Japanese Patent Application No. 2014-185432 (filing date: September 11, 2014). This application incorporates the entire content of the basic application by referring to this basic application. technical field [0003] Embodiments of the present invention relate to a semiconductor device. Background technique [0004] As a semiconductor device having both an IGBT (Insulated Gate Bipolar Transistor, an insulated gate bipolar transistor) and a diode, there is a reverse conducting IGBT (Insulated Gate Bipolar Transistor). In a reverse conducting IGBT, a part of the p-type collector region is replaced with an n-type region, and this n-type region functions as a cathode region of a diode. [0005] However, in the reverse conducting IGBT, the injection of holes increases due to the impurity element introduced into the p-type base region of the IGBT, so that high-speed switc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06
CPCH01L29/0684H01L29/7398H01L29/407H01L29/8613H01L29/0603H01L29/1608H01L29/2203H01L27/0727H01L29/7397H01L29/0834
Inventor 小仓常雄三须伸一郎末代知子
Owner KK TOSHIBA