Method of reducing wafer epitaxy process defect
An epitaxial process, wafer technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as waste, loss of normal working time of machines, affecting product yield, etc., to improve defect performance and improve product quality. rate effect
Inactive Publication Date: 2016-03-30
SEMICON MFG INT (SHANGHAI) CORP
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And in the case of seriously affecting the product yield, it is necessary to replace the entire pipeline of hydrogen chloride gas
This will cause great waste and loss of machine normal working time (up-time)
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[0024] The present invention will be further described below in conjunction with specific embodiment and accompanying drawing, set forth more details in the following description so as to fully understand the present invention, but the present invention can obviously be implemented in many other ways different from this description, Those skilled in the art can make similar promotions and deductions based on actual application situations without violating the connotation of the present invention, so the content of this specific embodiment should not limit the protection scope of the present invention.
[0025] figure 2 It is a flowchart of a method for a wafer epitaxy process capable of reducing defects according to an embodiment of the present invention. Such as figure 2 As shown, the method flow includes the following actions:
[0026] Step S201 is executed, using hydrogen chloride (HCL) gas to clean the residual covering layer in a reaction chamber of the epitaxial proc...
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The invention provides a method of reducing a wafer epitaxy process defect. The method comprises the steps of cleaning the residual coating in a reaction chamber of the epitaxy process by using hydrogen chloride (HCL) gas; feeding hydrogen into the reaction chamber, baking, and removing impurity gas absorbed by the HCL gas; providing a semiconductor wafer and loading the semiconductor wafer into the reaction chamber; growing an epitaxial layer on the surface of the wafer; and cooling the reaction chamber and the wafer, and unloading the wafer from the reaction chamber. As for the expitaxy process by using the HCL gas as a cleaning agent for the reaction chamber, a large flow of hydrogen is fed at a high temperature and baked between the steps of cleaning the reaction chamber and the loading the wafer. With the method, by use of high reducibility of hydrogen, the cured water vapour, oxygen and other impurity gas in the HCL gas are released and removed, the defect performance of an expitaxy process product is significantly improved, and the final product yield is increased.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular, the invention relates to a method for reducing defects in a wafer epitaxy process. Background technique [0002] In the current epitaxy process, hydrogen chloride (HCL) gas is generally used to clean the residual coating on the wall of the reaction chamber (chamber) before epitaxy growth of each wafer. These redundant capping layers are brought by the growth of the epitaxial layer on the previous wafer. By using such a method the lifetime of the reaction chamber and some other components can be extended. [0003] figure 1 It is a method flowchart of a wafer epitaxy process in the prior art. Such as figure 1 As shown, the method flow includes: first, using hydrogen chloride gas to clean the residual covering layer in a reaction chamber of the epitaxial process; secondly, providing a semiconductor wafer, and loading the wafer into the reaction chamber; then, o...
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IPC IPC(8): H01L21/02
Inventor 李远哲陈彤
Owner SEMICON MFG INT (SHANGHAI) CORP