Plasma processing apparatus

Abstract

The invention provides a plasma processing apparatus comprising a reaction chamber, a drive device and a rotating shaft. A carrying device and a tray are disposed in the reaction chamber. The tray is used for carrying a plurality of substrates. The carrying device is used for carrying the tray. An adsorbing electrode is disposed in the carrying device, and is connected electrically with a power supply so that the tray and the carrying device can be fixed by way of electrostatic adsorption. The rotating shaft is disposed corresponding to the center region of the tray. One end of the rotating shaft is connected fixedly with the carrying device, and the other end of the rotating shaft is connected with a drive shaft of the drive device. The drive shaft of the drive device is used for driving the rotating shaft to rotate horizontally around the center axis of the rotating shaft, so as to drive the carrying device and the tray to rotate horizontally around the center axis of the tray. The plasma processing apparatus can improve the uniformity among the plurality of substrates in the same circle, thereby improving the uniformity of the plurality of substrates in a single process.

Description

Technical field [0001] The invention belongs to the technical field of microelectronic processing, and specifically relates to a plasma processing equipment. Background technique [0002] In technical fields such as integrated circuit manufacturing, solar photovoltaic, and semiconductor lighting, plasma processing equipment is one of the most widely used equipment. In practical applications, inductively coupled plasma processing equipment can obtain high-density plasma under lower working pressure, simple structure, low cost, and can be used to generate plasma and control plasma energy. The advantages of independent control of sources are currently widely used. [0003] Patterned Sapphire Substrate (hereinafter referred to as PSS) is the current mainstream technology for improving the light-emitting efficiency of LED devices. Inductively coupled plasma processing equipment is usually used to etch the sapphire substrate with mask patterns to The imaged sapphire substrate was obtai...

AI Technical Summary

Problems solved by technology

[0005] In order to improve the throughput of a single process, usually a plurality of substrates S are carried on the tray 14, such as figure 2 As shown, the tray 14 is formed with three areas of the center, the inner ring layer and the outer ring layer along its radial direction, and are respectively 1 piece, 7 pieces and 14 pieces. In practical applications, it is difficult to guarantee the two basic areas in the PSS process. The uniformity of the graphic morphology between the slices (that is, the uniformity between the slices), especially the uniformity between the slices in the same circle layer of the inner ring layer or the outer ring layer, which often causes the etched pattern to appear asymmetrical or eccentric Phenomenon, resulting in poor process quality and low yield

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