Capacitor and preparation method
A technology of capacitors and electrodes, which is applied in the fields of electrical solid-state devices, semiconductor/solid-state device manufacturing, circuits, etc., and can solve problems such as substandard electrical properties of MIM capacitors
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preparation example Construction
[0045] According to the above core idea, the present invention also provides a method for preparing a capacitor, comprising the following steps:
[0046] Step S11, providing a first electrode;
[0047] Step S12, forming a stacked dielectric on the first electrode, wherein the stacked dielectric at least includes a first dielectric film with a first refractive index and a second dielectric film with a second refractive index, and the first dielectric film a refractive index less than said second refractive index;
[0048] Step S13 , forming a second electrode on the laminated dielectric.
no. 1 example
[0051] The following combination Figure 1 to Figure 5 , specifically explain the capacitor and the preparation method of the present invention. In this embodiment, the capacitor is described by taking an MIM capacitor as an example. in, figure 1 It is a flowchart of a method for preparing a capacitor in an embodiment of the present invention; Figure 2 to Figure 5 It is a schematic diagram of the device structure of the capacitor in the manufacturing process in the first embodiment of the present invention. In this embodiment, the laminated dielectric includes one of the first dielectric film and one of the second dielectric film.
[0052] First, proceed to step S11, such as figure 2 As shown, a first electrode 100 is provided. The capacitor in this embodiment is a MIM capacitor, so the material of the first electrode 100 is metal, such as copper metal. Generally, the first electrode 100 is formed on a substrate, and the substrate material is silicon oxide, silicon nitri...
no. 2 example
[0060] see Image 6 ,in, Image 6 It is a schematic diagram of the capacitor in the second embodiment of the present invention. exist Image 6 , the reference numerals indicate the same Figure 2-Figure 5 The same expression is the same structure as the first embodiment. The capacitor 2 of the second embodiment is basically the same as the capacitor 1 of the first embodiment, the difference is that the stacked dielectric 220 includes two first dielectric films 121 and one second dielectric film 122 , the second dielectric film 122 is located between the two first dielectric films 121, one of the first dielectric films 121 is located between the second dielectric film 122 and the first electrode 100, and the other of the first dielectric film 121 A dielectric film 121 is located between the second dielectric film 122 and the second electrode 130 .
[0061] In this embodiment, the manufacturing process of the first dielectric film 121 and the second dielectric film 122 is t...
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Abstract
Description
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