A kind of semiconductor device and its manufacturing method and electronic device

Abstract

The invention provides a semiconductor device, a manufacturing method thereof and an electronic apparatus. The manufacturing method comprises the steps of providing a device wafer which includes a substrate and a front structure formed at the front of the substrate; providing a support wafer, and bonding the support wafer and the front of the device wafer temporarily through an adhesive layer; thinning the back of the device wafer; forming a collector region on the back of the device wafer; forming, on the surface of the collector region, a collector electrode which is an alloy having a film forming temperature lower than 200 DEG C; and de-bonding to separate the device wafer from the support wafer. The preparation method of the invention can achieve good ohmic contact between the collector electrode and the collector region by adopting the collector electrode having a film forming temperature lower than 200 DEG C and without the need of alloying treatment. The use of a costly Taiko wafer can be avoided, the production cost is reduced, secure transmission of the device wafer is ensured without the occurrence of fragmentation problem, and the yield is therefore improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] In semiconductor technology, an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, referred to as IGBT) is a composite fully-controlled voltage-driven power semiconductor composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET). The device has both the advantages of high input impedance of MOSFET and low conduction voltage drop of power transistor (ie, giant transistor, referred to as GTR). Therefore, IGBT, as a necessary switching device, is widely used in inverters and inverters. Converter and other circuit structures. [0003] In order to reduce energy loss and improve heat dissipation, it is often necessary to thin the IGBT device. However, the thinner the wafer, the more likely it will be cracked and d...

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Problems solved by technology

However, the cost of this method is relatively high, which will increase the production cost

[0004] Another method is the method of temporary bonding / de-bonding; but this method is very difficult when making a double-sided process on a thinned silicon wafer, especially in the alloy of the back metal. During the chemical process, the temperature is too high, which may lead to the failure of the temporary bonding (glue) on the front side, resulting in the inability to operate the wafer

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