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179 results about "De bonding" patented technology

Cigarette aluminum-foil paper with anti-counterfeiting label

The invention provides cigarette aluminum-foil paper with an anti-counterfeiting label. The cigarette aluminum-foil paper comprises liner paper and an aluminum foil layer. An anti-counterfeiting laser film is arranged on the surface of the aluminum foil layer. The manufacturing process comprises the steps that the laser film is manufactured, an aluminum foil body coated with glue is heated and baked, the laser film and the aluminum foil are composited, a BOPP film is stripped from a cured semi-finished product, a BOPP base film on a cooled composited film is removed, a complexing agent for connecting the liner paper and the aluminum foil layer is prepared, and finally the liner paper and the aluminum foil layer are composited. The BOPP base film has the good temperature resistance and ageing resistance, materials are soft, no transparent de-bonding layer needs to coat the materials, and the technological process is simple; the anti-counterfeiting film is transferred onto aluminum foil, laser patterns will not disappear and are not likely to be damaged, and the while film is good in high temperature resistance and will not crack. The complexing agent between the liner paper and the aluminum foil layer is not likely to volatilize to generate hazardous substances, the temperature is high, and adhesive force can be provided for the liner paper and the aluminum foil layer for a long time.
Owner:CHUZHOU CIGARETTE MATERIALS FACTORY

Method using ultrasonic wave to detect bonding quality

The invention provides a method using ultrasonic wave to detect the bonding quality. The method comprises the following steps: (1) utilizing an ultrasonic wave characteristic scanning technology to find the characteristic waves of rubber, a bonding agent, and a metal member, carrying out ultrasonic tomography in a designated depth range through ultrasonic waves to obtain the de-bonding area or weak-bonding area in any region, automatically recognizing the de-bonding areas and weak-bonding areas by a computer, and then individually calculating the de-bonding area and weak-bonding area; (2) according to the results of characteristic wave imaging, judging the bonding quality. In the step two, simulation software is adopted to calculate the area of each defect and the elastic amplitudes of all defect areas so as to judge the relative bonding strength of each defect area. According to the provided ultrasonic detection method, computer simulation recognition and control technologies are adopted, the artificial uncertain factors in conventional sampling method are reduced, the stability of monitoring technology is improved, thus the reliability of quality of bonded products is improved, and an aviation quality acceptance standard suitable for aviation products is mapped out.
Owner:XIAN AERO ENGINE CONTROLS

Technique method for patterning back surface of silicon wafer

The invention discloses a technique method for patterning the back surface of a silicon wafer. The technique method comprises: depositing a protective layer 1; forming a forming a deep trench and defining an aligning mark by using the deep trench; filling the deep trench; depositing a protective layer 2 in order to isolate a filler from a front-surface pattern to be formed subsequently; completing all front-surface patterning techniques; depositing a protective layer 3; reversing the silicon wafer and bonding the front surface of the silicon wafer with a carrier; grinding the back surface of the silicon wafer, wherein the aligning mark is exposed out of the back surface of the silicon wafer after the back surface of the silicon wafer is grinded; aligning by using the aligning mark and performing back surface patterning technique on the back surface of the silicon wafer; and performing a de-bonding technique for separating the silicon wafer from the carrier. According to the method provided by the invention, the aligning mark penetrates through the silicon wafer from the front surface to the back surface; when the back surface patterning technique is performed, an extra photoetching device and technique are not required to be added for achieving the aligning of the back-surface pattern and the front-surface pattern; and the production cost can be greatly decreased. In addition, the method is also compatible with a thin slice technique.
Owner:SHANGHAI HUAHONG GRACE SEMICON MFG CORP

Wafer-level back gold chip packaging structure and packaging method thereof

The present invention discloses a back gold chip packaging structure and a packaging method thereof, belonging to the technical field of semiconductor packaging. A plurality of chip electrodes and front protective layers are arranged at the front surface of a silicon-based body, each front protective layer is provided with one front protective layer opening to expose chip electrodes again, and metal bump are arranged at the surfaces of the chip electrodes. The back surface of the silicon-based body is provided with a back gold layer, the back gold layer is in bonding connection with the back surface of the silicon-based body through a back gold bonding layer. A plastic packaging layer packages exposed surfaces of the back gold layer and the silicon-based body, and a plastic packaging layeropening is arranged to expose the exposed surface of the back surface of the back gold layer. The wafer-level back gold chip packaging structure and the packaging method thereof are simple in packaging flow, the silicon face processing technology, the back gold technology, the plastic packaging material ablation and the de-bonding technology are completed on a wafer, and therefore, the wafer-level back gold chip packaging structure and the packaging method thereof accord with future development direction of semiconductor manufacturing.
Owner:JIANGYIN CHANGDIAN ADVANCED PACKAGING CO LTD
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