Infrared sensor and packaging structure thereof and preparation method thereof
A technology of infrared sensor and packaging structure, which is applied in semiconductor devices, electric radiation detectors, final product manufacturing, etc., can solve the problems of high cost, high cost, low production capacity, etc., reduce process cost and difficulty, and increase effective fill factor , the effect of reducing the preparation cost
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[0027] The present invention will be described in further detail below in conjunction with the accompanying drawings.
[0028] The present invention provides an infrared sensor and its packaging structure, wherein the infrared sensor and its packaging structure include:
[0029] The readout circuit substrate is used to collect and process the output signal of the infrared sensor;
[0030] The infrared sensor unit, including some pixels in the infrared sensor array, is used to convert the infrared radiation incident on the infrared sensor unit into an electrical signal and output it from the readout circuit substrate;
[0031] The vacuum microcavity structure encapsulates the infrared sensor unit in the vacuum environment of its inner area, and the vacuum microcavity structure includes a support shell with a release channel, an infrared anti-reflection device located above the support shell and blocking the release channel Membrane, a getter thin film inside the vacuum microca...
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