Method for measuring epitaxial layer in epitaxy device and epitaxy process

Abstract

The invention provides an epitaxial device and an epitaxial layer measuring method in an epitaxial process. The device comprises a reaction chamber; an observation window arranged in the reaction chamber; a tray arranged inside the reaction chamber, wherein the tray is carried with wafers; and an optical fiber type Fourier infrared spectrum analyzer, which has an optical fiber. One end of the optical fiber is corresponding to the observation window; the optical fiber is used for emitting infrared light rays, and the infrared light rays are irradiated to the wafers through the observation window; reflected light reflected by the wafers is received by the observation window; and the optical fiber type Fourier infrared spectrum analyzer is used for detecting the thickness of an epitaxial layer of each wafer according to the reflected light. The epitaxial device can carry out real-time guidance on the epitaxial process, so that the epitaxial process is allowed to be more controllable, qualified rate of a product produced in the epitaxial process is greatly improved, waste product due to inappropriate process parameter selection is effectively prevented, and meanwhile, utilization rate of raw materials in the epitaxial process and output of the epitaxial device are improved favorably.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an epitaxial device and a method for measuring an epitaxial layer in an epitaxial process. Background technique [0002] With the advancement of microelectronics technology, the integration level of integrated circuits has been continuously improved, and the complexity of its process has also been continuously improved. Therefore, strict requirements are imposed on various parameters such as temperature, pressure, growth rate, doping concentration, and uniformity of gas flow field in the production process. [0003] In silicon homoepitaxy, the thickness, uniformity and surface flatness of the epitaxial layer are very critical parameters. These parameters have a direct and crucial impact on the subsequent semiconductor device process and device performance. In the preparation process of silicon planar transistors and integrated circuits, the uniformity of the epitaxial la...

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Problems solved by technology

[0008] 1. Fourier transform infrared spectroscopy can only be used to measure the finished product after epitaxy, and cannot measure parameters such as the thickness of the epitaxial layer during the growth process

[0009] 2. Since silicon materials can absorb energy in the entire visible spectrum range, interference in the visible range cannot be used for the measurement of silicon epitaxy

In addition, this method of using visible light interference obtains an interference spectrum that varies with thickness. The accurate thickness value needs to be calculated according to time, and the thickness value cannot be directly obtained.

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