Self-rectification RRAM (Resistive Random Access Memory) storage unit structure and 3D interlaced array
A resistive random access memory technology, applied in electrical components, electric solid devices, circuits, etc., can solve the problems of 1R storage unit latent current, RRAM3D interleaved array is difficult to manufacture, etc., to achieve the effect of easy manufacturing and solving latent current
Active Publication Date: 2016-04-06
WINBOND ELECTRONICS CORP
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[0007] The object of the present invention is to provide a kind of resistive random access memory (RRAM) storage unit structure and 3D interleave array, to solve traditional RRAM3D interleave array not easy to manufacture and the latent current problem of 1R storage unit
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[0029] The fabrication and use of the embodiments of the present invention will be described in detail below. It should be noted, however, that the present invention provides many applicable inventive concepts, which can be embodied in various specific forms. The specific embodiments discussed herein are merely specific ways to make and use the invention, and do not limit the scope of the invention. All implementations that can be deduced by those skilled in the art from the claims of the present invention belong to the contents to be disclosed in the present invention. Furthermore, repeated reference numerals or designations may be used in different embodiments. These repetitions are only for the purpose of simply and clearly describing the present invention, and do not represent any relationship between the different embodiments and / or structures discussed. Furthermore, when it is mentioned that a first material layer is located on or above a second material layer, it incl...
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The invention provides a self-rectification RRAM storage unit structure and a 3D interlaced array. The storage unit structure comprises a first electrode layer composed of nitride of a first metal element, a second electrode layer composed of a second metal element different from the first metal element, a first resistance conversion layer and a second resistance conversion layer, wherein the first resistance conversion layer is clamped between the first electrode layer and the second resistance conversion layer, the second resistance conversion layer is clamped between the second electrode layer and the first resistance conversion layer, the first resistance conversion layer includes a first energy gap, the second resistance conversion layer includes a second energy gap, and the first energy gap is smaller than the second energy gap. According to the invention, the storage unit structure does not need an intermediate metal layer, is characterized by self current limitation and self rectification, can manufacture the RRAM 3D interlaced array conveniently, and solves the problem of sneak current.
Description
technical field [0001] The present invention relates to a memory device, and in particular to a resistive random access memory (RRAM) memory cell structure and a 3D interleaved array. Background technique [0002] As the functionality of integrated circuits increases, so does the demand for memory. Designers have focused on reducing the size of memory devices and stacking more memory devices per unit area to achieve higher capacities and lower cost per bit. In recent decades, flash memory has been widely used as a large-capacity and inexpensive nonvolatile memory that can store data even when the power is turned off due to the progress of photolithography technology. In addition, flash memory can achieve high density through 3D interleaved arrays, such as using vertical NAND memory cell stacking. However, it has been found that flash memory scaling is limited with increasing cost. [0003] Designers are looking for the next generation of non-volatile memory, such as magne...
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Inventor 侯拓宏徐崇威周群策赖韦利
Owner WINBOND ELECTRONICS CORP