Thin film material structure for InSb magnetic-sensitive device and manufacturing process

Abstract

The invention discloses a thin film material structure for an InSb magnetic-sensitive device and a manufacturing process. A doping effect is shielded through a transition layer, and the electrical property of a thin film layer is ensured; the transition layer is selected from the same material as the thin film layer; the difference between the coefficients of thermal expansion of the transition layer and the thin film layer is quite low, so that the influence on the thin film layer caused by the difference of the coefficients of thermal expansion is reduced; when a ceramic material is selected as a substrate layer material, the influence on the thin film layer caused by voids in the ceramic is avoided due to the transition layer; and the transition layer and the thin film layer are both conductive layers, and an insulating layer is added between the transition layer and the thin film layer for performing an insulating function.

Description

technical field [0001] The invention relates to a thin film material structure and a manufacturing process for an InSb magnetic sensitive device. Background technique [0002] The thin film material structure that is used for InSb magnetosensitive device in the prior art is to directly evaporate and grow the InSb film layer on the substrate layer, which has the following defects: 1. Thermal stress will be generated after the InSb film is changed by cold and heat, and InSb and substrate The thermal expansion coefficient of the material used in the bottom layer is very different, which will damage the quality of the InSb film when the temperature changes; 2. The impurities in the substrate material have a doping effect on the InSb directly grown on it, so that the electrical properties of the film change. Poor; 3. In the prior art, ceramics are a commonly used material for the substrate layer, but the ceramic structure is incomplete, and there are many tiny holes on it, so the...

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Problems solved by technology

[0002] The film material structure used for InSb magnetic sensitive devices in the prior art is to directly evaporate and grow the InSb film layer on the substrate layer, which has the following defects: 1. InSb The thermal stress of the film will be generated after the change of heat and cold, and the thermal expansion coefficient of InSb and the material used in the substrate layer are very different, so the quality of the InSb film will be damaged when the heat is changed; 2. The impurities in the substrate material directly grow on the The above InSb has a doping effect, which makes the electrical properties of the film worse; 3. In the prior art, ceramics are a commonly used material for the substrate layer, but the ceramic structure is incomplete, and there are many tiny holes on it, so it is directly grown on The above InSb film will also be affected by it and holes will appear

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