126results about How to "Small difference in coefficient of thermal expansion" patented technology

The invention discloses a 3D curved ultrathin glass bending and forming device and a manufacturing method. The device comprises a rotor disc, concave dies, a convex die, a cylinder, a glass transfer mechanism, a tunnel furnace, a vacuum system and an electric control operating system, and a plurality of concave dies are arranged on the rotor disc. By adopting the device, the concave dies and the convex die are quickly heated in different stages; the ultrathin glass is sequentially placed on the concave dies of the rotor disc and is subjected to preheating; when the ultrathin glass rotates and reaches the corresponding work station on the convex die, the convex die is pressed, and a far infrared lamp tube is utilized to quickly heat to the glass softening point; in addition, the ultrathin glass on the concave dies is sucked and the convex die is pressurized by virtue of the vacuum system, so that the ultrathin glass is bended; the ultrathin glass is transferred to the tunnel furnace to be cooled by virtue of the glass transfer mechanism, so that the 3D curved ultrathin glass can be manufactured.

The invention discloses a semiconductor packaging structure for stacking and a manufacturing method thereof. The semiconductor packaging structure comprises a bottom substrate, a chip, an annular switchover substrate and packaging colloid. The bottom substrate is provided with a plurality of welding pads and a chip bearing area; the chip is fixedly arranged on the chip bearing area of the bottom substrate; a plurality of switchover assemblies and an opening are arranged on the annular switchover substrate; the switchover assemblies surround the opening and are electrically connected with the welding pads of the bottom substrate; the packaging colloid is filled in a gap between the bottom substrate and the annular switchover substrate, and is filled in the opening of the annular switchover substrate; and the packaging colloid in the opening is exposed to one top surface of the chip. With the adoption of the annular switchover substrate, the upper side and the lower side of a packaged body are slightly different in coefficient of thermal expansion, so that the warping rate is relatively lowered.

The invention provides aluminum electrically conductive slurry used for a solar cell and a preparation method thereof. The aluminum electrically conductive slurry used for the solar cell comprises the following components: aluminum powder, glass powder, an organic carrier and an inorganic additive powder, wherein the inorganic additive powder with the intermediate grain size D50 of 0.1-5.0 microns is one or more selected from beta-eucryptite, zirconium tungstate or zirconium vanadate. After the aluminum electrically conductive slurry used for the solar cell is silk-screen printed to a crystal silicon solar cell and is sintered into a film, the metal film is attached to a silicon substrate firmly. The aluminum electrically conductive slurry used for the solar cell has a smooth and compact surface, is free from aluminum beads and aluminum blistersm and has high photoelectric conversion efficiency; the warping degree of the cell is small; and the average warping degree of the 156*156 type polycrystalline silicon solar cell is less than 0.50 mm.

The high temperature alloy protecting technology includes the first forming binding layer in the same components as the substrate on the surface of the high temperature alloy substrate and the subsequent baking composite oxide coating on the surface. The composite oxide coating consists of basic enamel material and added Al2O3 or MgO in 10-40 wt% and Y2O3 in 1-5 wt%; and the basic enamel material consists of ZrO2 3-6 wt%, Al2O3 3-6 wt%, ZnO 8-12 wt%, CaO 3-6 wt%, B2O3 3-6 wt%, Na2O 3-6 wt%, K2O 5-8 wt%, TiO2 1-4 wt% and SiO2 for the rest. The present invention raises the high temperature oxidation resistance and heat corrosion resistance of the substrate and raise the stripping-off resistance of the coating and avoids the mutual diffusion between elements.

The invention provides an interconnector used for a solar cell and a manufacturing method thereof, and a solar cell interconnection method and an assembly thereof. In the prior art, an interconnector is in welding connection with a solar cell so that problems of high heating temperature, and bending, subfissure and fragments caused by incapability of interconnection materials in reducing the difference of thermal expansion coefficients of the interconnector and the solar cell exist; and when adhesive connection is adopted, the interconnector and a conductive adhesive layer are of a split structure so that manufacturing efficiency is lower. The interconnector used for the solar cell includes a metal base material, and a conductive adhesive layer and a separation layer, which are sequentially laminated on the metal base material. The manufacturing of the interconnector is as follows: providing a metal substrate; coating the upper and/or lower surface of the metal substrate with the conductive adhesive layer which covers the isolation layer; and finally cutting the metal substrate, the conductive adhesive layer and the isolation layer so as to form the interconnector. Therefore, the difference of the thermal expansion coefficients of the interconnector and the solar cell can be reduced effectively and thus bending, subfissure and fragments of the solar cell caused by the difference are prevented; and moreover, the manufacturing efficiency and the power of the solar cell assembly can be improved.

The invention relates to a hip prosthesis handle surface nanometer biological active coating and a preparing method thereof. The hip prosthesis handle surface nanometer biological active coating is characterized in that a joint handle surface is sequentially formed by a Ti6Al4V matrix (1), a metal Ti layer (2), a metal Ti and compact ceramic mixing layer (3), a compact ceramic layer (4), a compact ceramic and BAG/HA/Si mixing layer (5) and a BAG/HA/Si multi-element biological active layer (6). A non-equilibrium magnetic sputtering technology is adopted for sequential deposition of a multifunctional nanometer gradient composite coating with continuously-changed ingredients. The coating prepared from the method has the good biological activity, the good biocompatibility and the good membrane-matrix bonding strength, and BAG and HA are compounded so that the degradation speed of the coating can be regulated and controlled to be closer to the human tissue; a compact transition layer can effectively prevent releasing of harmful metal ions; and Si is a catalyst for converting BAG to apatite and plays an important role in initial bone calcification. By means of the hip prosthesis handle surface nanometer biological active coating and the preparing method, the bonding strength of the prosthesis handle and the surface coating can be improved, firm chemical bonding with the human bone tissue can be formed, releasing of the harmful metal ions is reduced, and the using reliability of the prosthesis handle is improved.

The invention discloses a welding connection method of oxide ceramic and metal, using brazing filler metal as an interlayer to connect ceramic and stainless steel metal in a vacuum high temperature environment. The method comprises the following steps: step S1: preparing the ceramic; step S2: making a brazing sample; step S3: performing high-temperature high-vacuum brazing on the sample. The invention relates to the field of connection between different materials, in particular to a connection method of the oxide ceramic and the stainless steel metal, integrating performance advantages of bothceramic and metal in application. Particularly a brazing connection method of aluminum oxide ceramic as well as composite ceramic thereof and the stainless steel metal is disclosed; the used interlayer adopts (Ag72-Cu28)96Ti4 brazing filler metal. The toughness, strength, wear resistance and the like can meet the application requirements in fields such as kitchenware, mobile phone cover plates, auto parts and aviation.

A protection coating for a hi-temp alloy is characterized in that, the coating is a compound coating of metal and enamel formed by spreading some metallic powder on an enamel substrate. Wherein, the metallic powder is MCrAlY powder of high thermal expansion rate coefficient and good resistance to hi-temp corrosion, M is one from Ni, Co, NiCo or any combination of them. Way for preparing the protection coating for hi-temp alloy is: first of all the metallic powder is fully mixed with the enamel powder, then the mixed powder is sprayed on the surface of a specimen, still then a metal-enamel compound coating spread on the enamel substrate is formed by high temperature sintering. The metal-enamel compound coating prepared by the invention is not only furnished with excellent resistance to hi-temp corrosion, but also highly improved thermal expansion rate coefficient because of the addition of plastic metallic powder, and greatly improved thermal vibration property.

Disclosed are a glass frit using low melting point glass powder with superior durability, sealing reliability, and water resistance which is suitable for an OLED panel sealing, and a low expansion crystalline ceramic filler which controls a coefficient of thermal expansion, and a paste including the same. According to the present invention, the low melting point glass frit comprises the low melting point glass powder consisting of 0.1-20mol% of V2O5, 30-60mol% of ZnO, 10-30mol% of B2O3, 0.1-10mol% of BaO, 0.1-10mol% of SiO2, 0.1-15mol% of TeO2, and 2-20mol% of at least one of CuO, Fe2O3, and Co3O4; and less than 70 parts by weight of low expansion crystalline ceramic filler with respect to 100 parts by weight of the low melting point glass powder.

The invention relates to a target material assembly forming method, which comprises: providing a ceramic target material, wherein the ceramic target material is provided with a target material weldingsurface; providing a metal back plate, wherein the metal back plate is provided with a back plate welding surface; plating nickel on the welding surface of the target material to form a nickel plating layer; placing a solder on the surface of the nickel plating layer and the welding surface of the back plate, and welding the ceramic target material and the metal back plate to form the target material assembly. According to the invention, the welding strength between the ceramic target material and the metal back plate can be improved.

The invention discloses a surfacing treatment method of a winding drum of a wire drawing machine. The surfacing treatment method comprises the following steps of: carrying out cylindrical turning a winding drum body subjected to destressed heat treatment, carrying out sand-spraying oil-removing and water-removing pretreatment on the surface, preheating the winding drum in an electric furnace to be 350-400 DEG C, carrying out automatic surfacing with submerged arcs, stopping the surfacing when a surfacing layer reaches 5-6mm, then carrying out slow-cooling treatment, heating the winding drum in the electric furnace to be 400 DEG C, insulating for 2 hours, cooling along with the furnace, and finally forming the winding drum by turning and grinding. The surfacing treatment method has the advantages that the hardness of the winding drum reaches HRC57-60, the wear resistance is good and the service life is long.

The invention relates to an alloy electrode for a skutterudite thermoelectric element and a preparation method thereof. The alloy electrode provided by the invention is an alloy electrode deposited at two end parts of the skutterudite thermoelectric element. The alloy electrode is made of a Ni-Mo alloy or a Ni-W alloy, wherein the molar percentage content of Mo in the Ni-Mo alloy is 10%-40%, the molar percentage content of W in the Ni-W alloy is 5%-40%. In the invention, the selected electrode material is a Ni(Mo) or Ni(W) alloy electrode prepared through an electroplating or chemical plating method. The alloy electrode is good in conductivity and excellent in weldability, the coefficient of thermal expansion of a Ni-containing electrode can be adjusted through substances with a small coefficient of thermal expansion such as Mo and W, and the difference between the electrode material and a skutterudite thermoelectric material in coefficient of thermal expansion is reduced.

The invention discloses a method for manufacturing a gallium nitride-based LED (Light Emitting Diode) with a vertical structure. The method comprises the following steps of: (1) extending an n-type semiconductor layer and a p-type semiconductor layer on a sapphire substrate in sequence to form an LED wafer, performing metal evaporation on the surface of the LED wafer and treating in a nitrogen atmosphere at the temperature between 200 DEG C and 400 DEG C for 1-10 minutes to form a p electrode, and partitioning the LED wafer into independent LED chips; (2) evaporating gold layers on the upper surface and the lower surface of a composite metal substrate respectively, wherein the composite metal substrate is made of a copper-molybdenum alloy or an aluminum-silicon alloy; (3) reversely welding the independent LED chips obtained in the step (1) onto the upper surface of the composite metal substrate respectively; (4) stripping substrates of the LED chips; and (5) manufacturing an n-type electrode on an n-type semiconductor material of each LED chip. In the method, a CuMo or AlSi composite metal substrate with high thermal conductivity is taken as a transfer substrate and has a small thermal expansion coefficient difference from a transferred LED chip, the thermal stress is small, and the bonding yield is increased.

The invention relates to a method for manufacturing a polycrystalline cubic boron nitride (PCBN) grinding wheel work layer with an abrasive particle dressing function, belonging to the manufacture field of superhard grinding material tools. The method comprises the following steps: abrading particles for Cu-Sn-Ti alloy powder and PCBN, fusing TiC particles, preparing a blank and sintering at hightemperature. The PCBN abrasive particle is formed by sintering CBN (cubic boron nitride) microcrystalline particles and AlN binder at high temperature and under high pressure. Once the CBN microcrystalline particles are blunt, the junction interface of CBN microcrystalline 5 and AlN binder is weakened along with the rise of the grinding force and the grinding temperature, so that the blunt CBN microcrystalline particles fall, and new CBN microcrystalline particles are quickly exposed to participate in the grinding process. The micro-breaking characteristics of the PCBN abrasive particles cause the superhard grinding material grinding wheel to still keep high sharp degree and avoid the phenomenon that grinding force and grinding temperature rapidly rise.

Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor layer. The stress regulating interface layer is operable to reduce the coefficient of thermal expansion difference between the semiconductor layer and the heat spreader to less than or equal to about 10 ppm/ DEG C.

The invention relates to a method for alleviating thermal stress of a porous silicon nitride ceramic and a transparent aluminum nitride ceramic in a connection process. By adopting the method, the porous silicon nitride ceramic is adopted as a transition layer to relieve the thermal stress of the porous silicon nitride ceramic and the transparent aluminum nitride ceramic in the connection process,the porosity of the porous silicon nitride ceramic is 30-70%, preferably 45-60%.

The invention belongs to the technical field of solid oxide electrolytic cells, and particularly relates to oxygen electrode slurry of a solid oxide electrolytic cell, a preparation method of the oxygen electrode slurry and the solid oxide electrolytic cell. The invention provides a preparation method of oxygen electrode slurry of the solid oxide electrolytic cell, which comprises the following steps: step 1, loading metal oxide nanoparticles in an oxygen electrode powder material to prepare oxygen electrode powder; and 2, mixing the oxygen electrode powder, a second pore-forming agent and a binder to prepare the oxygen electrode slurry of the solid oxide electrolytic cell. The invention provides oxygen electrode slurry of the solid oxide electrolytic cell, a preparation method of the oxygen electrode slurry and the solid oxide electrolytic cell, and can effectively overcome the technical defects that the initial internal resistance of the existing SOEC is large and the impedance of anoxygen electrode is increased quickly.

The invention discloses a method for preparing a multi-layer coating by adopting a thermal spraying method, and belongs to the technical field of composite coatings. The method comprises the following steps: adopting a single spraying mode in a thermal spraying process, and feeding mixed powder of two or more different spraying materials on the same path; accelerating different powder in plume flow to obtain different speeds; and enabling different powder to have different difference while being sprayed to a basal body, thereby obtaining powder of different densities or grain sizes of the multi-layer coating. Compared with the prior art, the method enables coatings to be combined with each other better, so that the coatings have stronger plasticity; the method has the advantages of making preparation of a thicker coating possible, reducing defects on an interface and the like. The method further has the characteristics of being simple in process and equipment, saving time and energy, being high in efficiency and the like.

The invention discloses a laser additive manufacturing method of an iron nickel-manganese copper dissimilar material metal part. The method comprises the following steps that firstly, an iron-nickel alloy is deposited on a substrate by adopting a laser additive manufacturing method; secondly, mixed powder composed of iron-nickel alloy powder with the iron-nickel alloy powder mass content larger than 70% or smaller than 50% and manganese-copper alloy powder serves as a raw material, and an iron nickel-manganese copper transition area is formed through deposition with the laser additive manufacturing method; and thirdly, manganese-copper alloy is deposited on the iron nickel-manganese copper transition area through the laser additive manufacturing method, the substrate is removed, and the iron nickel-manganese copper dissimilar material metal part is obtained. According to the method, by adjusting the deposition direction and controlling the transition path of the mixed powder, the defects of cracking, undissolved particles and the like of the iron nickel-manganese copper gradient material are overcome, and the obtained iron nickel-manganese copper dissimilar material metal part is compact in structure and small in transition area size, has the damping performance and low expansion performance and is wide in application range.

The invention provides an inversed LED (Light Emitting Diode) chip structure which comprises a silicon alloy substrate, a metal middle layer, a P-type gallium nitride semiconductor layer, an active layer and a N-type gallium nitride semiconductor layer sequentially stacked from bottom to top. According to the inversed LED chip structure, a transfer substrate made of silicon alloy which is approximate to a growth substrate in thermal expansion coefficient is adopted as the substrate of the LED chip to reduce the staggered damage of lattices of an LED chip apparatus layer, therefore, the leakage current is reduced, and the performance of product is improved. The invention further provides a preparation method of the inversed LED chip structure.

The invention discloses a semiconductor packaging structure and a packaging method. the packaging structure comprises a substrate, at least one chip located on the substrate and electrically connected with the substrate, a packaging layer for packaging the at least one chip, and a frame fixed on the upper surface of one chip and upper surfaces of the multiple chips, wherein the frame has a smaller thermal expansion coefficient that the packaging layer. Through fixing the frame on the upper surface of the chip, symmetry of the packaging structure can be added. As the frame has a smaller thermal expansion coefficient that the packaging layer, the thermal expansion coefficient of the packaging layer can be effectively reduced as the frame is additionally arranged. Thus, in the case of temperature rise and fall, the packaging layer and the substrate have basically the same expansion volumes. Warping caused by the thermal expansion coefficient difference can be effectively reduced, the chip can be prevented from being broken, and reliability of the packaging structure is improved.