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Stress regulated semiconductor and associated methods

A technology of stress adjustment and semiconductor, applied in the field of electronics and materials science, can solve problems such as limitations, limitations of electronic devices, and increased volume of cooling devices

Inactive Publication Date: 2013-01-23
RITEDIA CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the demand for miniaturization of electronic devices not only limits the increased volume of cooling devices, but also limits the need for electronic devices that need to be significantly reduced in size.

Method used

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  • Stress regulated semiconductor and associated methods
  • Stress regulated semiconductor and associated methods
  • Stress regulated semiconductor and associated methods

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0077] Epitaxial GaN is formed on a sapphire wafer by MOCVD (Metal Organic Chemical Vapor Deposition). Next, trimethylgallium is used as the source gas of Ga, ammonia is added to provide nitrogen atoms, and hydrogen can be added to dilute the gas and vaporize Ga or N atoms that are unstablely arranged in the crystal lattice. A multilayer semiconductor structure formed with n-type dopants containing silicon forms a junction with a sapphire substrate formed with p-type dopants containing Mg. The quantum well and intrinsic layer can be disposed between the p-type doped layer and the n-type doped layer. Next, an Ag reflective layer with a thickness of about 200 nm is sputtered on the top surface of the p-type doped layer, and then a Ti nucleation enhancer layer with a thickness of about 50 nm is sputtered on the reflective layer.

[0078] Next, deposit amorphous diamond with a thickness of about 1 μm on the nucleation enhancer layer by cathodic arc deposition. Another Ti nucleat...

Embodiment 2

[0080] Epitaxial GaN is formed on a sapphire wafer by MOCVD (Metal Organic Chemical Vapor Deposition). Trimethylgallium is the source gas of Ga, and ammonia is added to supply nitrogen atoms, and hydrogen can be added to dilute the gas and vaporize Ga or N atoms that are unstablely arranged in the crystal lattice. A multilayer semiconductor structure formed from n-type dopants containing silicon forms a junction with a sapphire wafer formed from p-type dopants containing Mg. The quantum well and the intrinsic layer can be arranged between the p-type doped layer and the n-type doped layer.

[0081] On the top surface of the p-type doped layer, graphite and Au are co-sputtered to form a reflective layer, wherein graphite is used to reduce the CTE of the reflective layer. In this case, CTE can be graded by controlling the ratio of Ag / C. Next, continue to coat graphite-free Ag on the reflective layer, and thicken the Ag layer by electroplating Cu or Ag.

Embodiment 3

[0083] Epitaxial GaN is formed on a sapphire wafer by MOCVD (Metal Organic Chemical Vapor Deposition). Trimethylgallium is the source gas of Ga, and ammonia is added to supply nitrogen atoms, and hydrogen can be added to dilute the gas and vaporize Ga or N atoms that are unstablely arranged in the crystal lattice. A multilayer semiconductor structure formed from n-type dopants containing silicon forms a junction with a sapphire wafer formed from p-type dopants containing Mg. The quantum well and the intrinsic layer can be arranged between the p-type doped layer and the n-type doped layer.

[0084]On the top surface of the p-type doped layer, graphite and Au are co-sputtered to form a reflective layer, wherein graphite is used to reduce the CTE of the reflective layer. In this case, CTE can be graded by controlling the ratio of Ag / C. Next, continue to coat graphite-free Ag on the reflective layer. A micron-sized monolayer of diamond particles is coated on the Ag layer, and t...

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Abstract

Stress regulated semiconductor devices and associated methods are provided. In one aspect, for example, a stress regulated semiconductor device can include a semiconductor layer, a stress regulating interface layer including a carbon layer formed on the semiconductor layer, and a heat spreader coupled to the carbon layer opposite the semiconductor layer. The stress regulating interface layer is operable to reduce the coefficient of thermal expansion difference between the semiconductor layer and the heat spreader to less than or equal to about 10 ppm / DEG C.

Description

technical field [0001] The invention belongs to the technical fields of electronics and materials science, and in particular relates to a semiconductor device and related methods. Background technique [0002] In many developed countries, it is generally believed that electronic devices are closely related to life, and the demand for miniaturization and speed of electronic devices increases with the increase in the use and dependence on electronic devices. As the speed of electronic circuits increases and the size decreases, cooling of electronic devices becomes an issue. [0003] Generally speaking, an electronic device is a circuit board composed of multiple electronic components connected to make the device have complete functions, wherein the electronic components are, for example, processors, transistors, resistors, capacitors, light-emitting diodes (LEDs), etc. . In a complete electronic device, there will be various heat-related problems due to the electronic compon...

Claims

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Application Information

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IPC IPC(8): H01L33/64H01L21/205
CPCH01L2224/05681H01L2221/68363H01L2224/29193H01L21/6835H01L2224/0567H01L24/03H01L2224/32245H01L33/46H01L2224/05666H01L2224/27452H01L2224/29166H01L2924/01029H01L23/373H01L21/4871H01L2224/05638H01L23/3735H01L2224/05139H01L23/3732H01L2224/05649H01L2224/29163H01L24/27H01L2224/0345H01L2224/29187H01L2224/27444H01L2224/05671H01L2224/04026H01L24/05H01L24/32H01L2224/05684H01L33/641H01L2224/2745H01L24/29H01L2224/83005H01L33/12H01L2224/0568H01L2221/68304H01L2224/2908H01L2224/05687H01L2924/12041H01L2924/045H01L2924/01006H01L2924/0503H01L2924/01005H01L2924/00014H01L2924/01014H01L2924/3512H01L2924/00
Inventor 宋健民甘明吉胡绍中
Owner RITEDIA CORPORATION
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