Semiconductor structures and methods of forming them
A semiconductor, directly above technology, applied in the field of semiconductor structure and its formation, can solve the problems that the vacuum degree of the closed cavity cannot meet the requirements, reduce the quality factor of MEMS devices, and the surface area of the adsorption layer is small, so as to maintain the vacuum degree and improve the quality Factors and properties, effect of increasing actual surface area
Active Publication Date: 2017-06-13
SEMICON MFG INT (SHANGHAI) CORP
View PDF3 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0005] As a result, the surface area of the adsorption layer is small, and the adsorption capacity for impurity gases in the cavity is weak, resulting in the vacuum degree in the closed cavity not meeting the requirements and reducing the quality factor of the MEMS device.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0034] As described in the background technology, in the prior art, in order to avoid the coupling effect between the adsorption layer on the surface of the cover plate in the cavity and the devices in the MEMS region, the adsorption layer cannot cover the entire MEMS region, so that the adsorption layer’s effect on the MEMS device The released gas has weak adsorption capacity, which will reduce the quality factor of MEMS devices.
[0035] In one embodiment of the present invention, a method for forming a semiconductor structure is provided.
[0036] Please refer to figure 1 , providing a cover plate 10 with a groove 11 on the cover plate 10 .
[0037] Please refer to figure 2 , an adsorption layer 12 is formed on the surface of the cover plate 10, and the adsorption layer 12 has a strong adsorption property for gas.
[0038] Please refer to image 3 , patterning the adsorption layer 12, retaining part of the adsorption layer 13 on the bottom of the groove and the side wa...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
A semiconductor structure and a method for forming the same, the method for forming the semiconductor structure includes: providing a semiconductor substrate, the semiconductor substrate includes a micro-electromechanical area, the micro-electro-mechanical area has a device, and the device includes a micro-electro-mechanical device and an inductor; providing a cover plate, Form grooves on the cover plate; form scattered protrusions on the bottom surface of the groove; form an adsorption layer on the inner wall surface of the groove and the surface of the cover plate, and the adsorption layer covers the protrusions; remove the surface of the cover plate and the groove part The adsorption layer on the surface of the inner wall; the cover plate is bonded to the semiconductor substrate, the groove of the cover plate and the semiconductor substrate form a closed cavity, and the devices on the micro-electromechanical area of the semiconductor substrate are located in the closed cavity In the chamber, the remaining adsorption layer is located on the bottom surface of the groove directly above the MEMS device and the side wall surface of the groove near the MEMS device. The method can improve the quality factor of microelectromechanical devices.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] As an interdisciplinary advanced manufacturing technology originated in the 1990s, micro-electromechanical systems (MEMS) are widely used to improve people's quality of life, improve people's living standards and enhance national strength. MEMS is a technology that uses the micro-processing technology of semiconductor integrated circuits to integrate sensors, brakes, and control circuits on tiny chips, also known as micro-nano technology. At present, it has been widely used in communication, automobile, optics, biology and other fields. In MEMS devices, quite a few components exist in the form of thin films with a thickness of several microns to hundreds of microns. [0003] Among the many MEMS devices, some MEMS devices need to work in a vacuum environment to reduce air resistance. The...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B81B7/00
Inventor 郑超王伟
Owner SEMICON MFG INT (SHANGHAI) CORP