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A method for erasing non-volatile memory

A non-volatile memory technology, applied in the field of erasing non-volatile memory, can solve the problems of slow erasing speed and spending a lot of time to correct, so as to speed up erasing speed and save time for over-erasing programming Effect

Active Publication Date: 2020-02-04
GIGADEVICE SEMICON (BEIJING) INC
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] However, when using the above prior art to erase memory blocks, it is still necessary to perform an erase process for sectors where all storage units have passed the erasure verification, which may easily lead to over-erasing of the storage units in the sector. It takes a lot of time to correct the voltage of the over-erased memory cells during the erase verification, resulting in slow erase speed

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  • A method for erasing non-volatile memory
  • A method for erasing non-volatile memory

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Embodiment Construction

[0031] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, only parts related to the present invention are shown in the drawings but not all content.

[0032] figure 1 It is a flowchart of a method for erasing a non-volatile memory provided by an embodiment of the present invention. The method is applicable to erasing stored data in a non-volatile memory. The implementation process of the method is described in detail as follows:

[0033] Step S1. Perform the first erasure verification on all sectors in the storage block that have undergone M erasing operations, and obtain sectors that need to be erased, where M is an integer greater than 1.

[0034] There are generally two ...

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Abstract

The invention discloses an erasing method of a nonvolatile memory. The method comprises the following steps: S1, carrying out first erasure validation on all sectors erased M times in a storage block and obtaining the sectors which need to be erased, wherein the M is an integer greater than 1; and S2, erasing the obtained sectors which need to be erased. The method disclosed by the invention has the advantages that only the obtained sectors which need to be erased are erased; the sectors which do not need to be erased are prevented from over-erasure; the time of carrying out over-erasure programming on storage units in the sectors which do not need to be erased is saved; and therefore, the erasing speed of the nonvolatile memory is increased.

Description

technical field [0001] The invention relates to the technical field of semiconductor memory, in particular to a method for erasing a nonvolatile memory. Background technique [0002] Non-volatile memory (Non-volatile Memory) has the advantage that data can be read, erased, programmed and other operations multiple times, and the stored data will not disappear after power off, so non-volatile memory Nonvolatile memory is widely used in electronic devices such as personal computers and electronic equipment. [0003] The storage block (Block) of the non-volatile memory usually includes a plurality of sectors (Sector), and each sector includes a plurality of storage units. When negative voltage is applied to the gate and substrate of the storage unit, the sector The data in the memory cells in the zone is erased. In the prior art, when erasing a storage block of a non-volatile memory, it is preferred to perform erasure verification (EV) sequentially on the sectors in the storag...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10G11C16/14
Inventor 胡洪洪杰陈建梅
Owner GIGADEVICE SEMICON (BEIJING) INC
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