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Semiconductor device and method for forming the same

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as device performance within the influence

Active Publication Date: 2016-05-11
TAIWAN SEMICON MFG CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In the above cases, the dislocations extend to or close to the surface, and the dislocations can seriously affect the performance of the devices formed within

Method used

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  • Semiconductor device and method for forming the same
  • Semiconductor device and method for forming the same
  • Semiconductor device and method for forming the same

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Embodiment Construction

[0024] The manufacture and use of the embodiments of the present invention are described below. It should be readily appreciated, however, that the embodiments of the invention provide many suitable inventive concepts that can be implemented in a wide variety of specific contexts. The specific embodiments disclosed are only intended to illustrate specific methods of making and using the invention, and are not intended to limit the scope of the invention.

[0025] figure 1 A substrate 102 is shown having trench isolation regions 104 therein according to an embodiment. The substrate 102 may include: bulk silicon, a doped or undoped insulating layer covering a semiconductor (semiconductor-on-insulator, SOI) type substrate or an active layer of the SOI substrate. Generally, SOI includes a layer of semiconductor material, such as silicon, formed on an insulating layer. The insulating layer can be a buried oxide (BOX) layer or a silicon oxide layer. The insulating layer is form...

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Abstract

A semiconductor device having an epitaxial layer a method of manufacture thereof is provided. The semiconductor device has a substrate with a trench formed therein and a recess formed below the trench. The recess has sidewalls with a (111) crystal orientation. The depth of the trench is such that the depth is greater than or equal to one-half a length of sidewalls of the recess. An epitaxial layer is formed in the recess and the trench. The depth of the trench is sufficient to cause dislocations formed between the interface of the semiconductor substrate and the epitaxial layer to terminate along sidewalls of the trench.

Description

[0001] This application is a divisional application of the invention patent application with the application number 201110021186.5, the application date is January 14, 2011, and the invention title is "semiconductor device and its manufacturing method". technical field [0002] The present invention relates to a semiconductor device, and more particularly to an inverted trapezoidal recess used in epitaxial growth. Background technique [0003] The performance of semiconductor devices can be enhanced by epitaxially growing other materials, such as III-V materials, on a semiconductor substrate. Differences in the lattice structure between the epitaxial material and the semiconductor substrate create stress within the epitaxial layer. Stress within the epitaxial layer can improve the speed and performance of integrated circuits. For example, in order to further improve transistor performance, transistors are manufactured using semiconductor substrates with strained channel reg...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205H01L21/762H01L29/04H01L29/06
CPCH01L21/02381H01L21/0243H01L21/02433H01L21/02458H01L21/0254H01L21/0262H01L21/02639H01L21/76224H01L29/0657H01L29/045H01L21/7621H01L21/31111H01L21/32055H01L21/76272H01L21/76283H01L29/0692H01L29/2003
Inventor 万幸仁柯志欣吴政宪
Owner TAIWAN SEMICON MFG CO LTD
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