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Method for doping silicon sheets

A technology of doping silicon and silicon wafers, which is applied in photovoltaic power generation, electrical components, climate sustainability, etc., and can solve problems such as heavy and non-automatic alignment

Inactive Publication Date: 2016-05-11
ION BEAM SERVICES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these techniques are either burdensome (number of method steps), or non-self-aligning (i.e., a geometric reference should be set on the wafer before each doping operation to ensure that subsequently doped parts do not differ from those already performed. partially overlap and are well differentiated)

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  • Method for doping silicon sheets
  • Method for doping silicon sheets
  • Method for doping silicon sheets

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Embodiment Construction

[0029] The growth of silicon oxide on partially doped silicon wafers is described in the following publication by Biermann, E.: "Silicon Oxidation Rate Dependence on Dopant Pile-up", Solid State Device Research Conference, 1989. ESSDERC'89.19th European, vol., no., pp. 49, 52, 11-14, September 1989.

[0030] Abstracts can be found at the following URLs:

[0031] http: / / ieeexplore.ieee.org / stamp / stamp.jsp? tp=&arnumber=5436671&isnum ber=5436370

[0032] figure 1 shows a cross-sectional view of a silicon wafer during the first step of the method according to the invention.

[0033] This first step consists in doping the first portion 11 of the surface 10 of the silicon wafer with a first chemical substance. The doping method used is plasma immersion doping P1, as described for example in document WO2012168575A2. To produce the first partial doping, the silicon wafer is placed in the plasma chamber 20 and a mask 30 is applied on the surface 10 of the silicon wafer. This...

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Abstract

The invention relates to a method for doping a silicon sheet for producing a photovoltaic cell, said method comprising the steps consisting of: carrying out a first doping of at least one first part (11) of a surface (10) of the silicon sheet; forming an oxide layer (40) on the partially doped surface (10); and carrying out a second doping via the oxide layer (40), such that another part (12) of the surface (10) of the silicon sheet is doped.

Description

technical field [0001] The present invention generally relates to the doping of silicon wafers (plaques desilicium) intended to form photovoltaic cells to be mounted on solar panels. Background technique [0002] Sequential doping of silicon wafers to produce photovoltaic cells is known in the prior art: for implementing n- or p-type local doping (also called doping boxes), the current technology relies on lithographic printing used in microelectronics techniques, either laser ablation, or localized annealing by laser. However, these techniques are either burdensome (number of method steps), or non-self-aligning (i.e., a geometric reference should be set on the wafer before each doping operation to ensure that subsequently doped parts do not differ from those already implemented. partially overlap and are well differentiated). Then, an activation co-anneal at a temperature is often required (when the doped part is achieved by implantation), which is very difficult to imple...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/223H01L31/18H01L29/10
CPCH01L21/2236H01L31/068H01L31/1804Y02E10/547Y02P70/50H01L31/186
Inventor B·贝克维特J·乔丹
Owner ION BEAM SERVICES