Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Nitride bottom layer, light emitting diode and preparation method of bottom layer

A technology of light-emitting diodes and nitrides, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of increased stress, reduced quality and light output efficiency of semiconductor components, and can reduce lattice differences and improve Luminous efficiency, the effect of reducing the underlying stress

Active Publication Date: 2018-09-14
ANHUI SANAN OPTOELECTRONICS CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, although oxygen can adjust the surface polarity of the aluminum nitride layer, the incorporation of oxygen into the aluminum nitride layer increases the lattice difference between the aluminum nitride layer and the subsequent epitaxial layer, such as the AlGaN material layer, resulting in The increase of defects and stress caused by lattice mismatch and thermal mismatch with the epitaxial layer reduces the device quality of semiconductor components and their light output efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nitride bottom layer, light emitting diode and preparation method of bottom layer
  • Nitride bottom layer, light emitting diode and preparation method of bottom layer
  • Nitride bottom layer, light emitting diode and preparation method of bottom layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] see Figure 1~2 , the nitride bottom layer, light emitting diode and bottom layer preparation method implemented in the present invention will be described in detail below.

[0028] Firstly, a substrate 100 is provided. The selection of the substrate 100 includes but not limited to sapphire, aluminum nitride, gallium nitride, silicon, and silicon carbide, and its surface structure can be a planar structure or a patterned structure. In this embodiment, a sapphire patterned substrate is used.

[0029] Next, put the substrate 100 into the PVD chamber and clean the surface of the substrate, adjust the temperature of the chamber to 20-200°C or 200-1100°C, the pressure to 2-10mtorr, and use the PVD method to deposit a thickness of 25-500 The aluminum nitride layer 210 of angstroms is fed with oxygen during the deposition process, so that the deposited aluminum nitride layer 210 contains a concentration of 1×10 20 ~9×10 23 cm -3 of oxygen elements. Since the natural cryst...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

Disclosed are a nitride underlayer, a light emitting diode and an underlayer manufacturing method. An aluminum nitride layer is deposited using physical vapor deposition, comprising: introducing oxygen into a reaction chamber during deposition to form an aluminum nitride layer containing oxygen (210); and treating the surface of the aluminum nitride layer by use of the physical properties of plasma, so as to reduce surface oxygen content of the aluminum nitride layer, forming a modified aluminum nitride layer (220), wherein the morphology of the modified layer is the same as the morphology of the aluminum nitride layer. Due to decreased surface oxygen content of the modified layer, the energy state of the surface is reduced, probability of bonding with a buffer layer is increased, and difference in lattice parameters with the buffer layer is decreased, such that stress on the underlayer of a light emitting diode is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor preparation, in particular to a nitride bottom layer capable of reducing stress, a light emitting diode and a preparation method for the bottom layer. Background technique [0002] The physical vapor deposition method (PVD method) has the characteristics of simple process, less environmental pollution, less raw material consumption, uniform and dense film formation, and strong bonding with the substrate. It is currently being increasingly used in the preparation of semiconductor components. Among them, it is usually used for the preparation of the bottom layer, such as depositing an aluminum nitride layer as a buffer layer. In the existing process, in order to adjust the surface polarity of the aluminum nitride layer, an appropriate amount of oxygen is often introduced during the deposition process. To facilitate the growth of the subsequent epitaxial layer. However, although oxygen can adjust the su...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L33/12
CPCH01L21/02H01L33/12
Inventor 黄文宾徐志波林兓兓张家宏
Owner ANHUI SANAN OPTOELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com