Nitride bottom layer, light emitting diode and bottom layer preparation method

Abstract

The invention provides a nitride bottom layer, a light emitting diode and a bottom layer preparation method. An aluminium nitride layer is deposited through a physical vapor method. In the deposition process, oxygen elements are put in a reaction cavity so as to form the aluminium nitride layer containing the oxygen elements. Plasma with the physics property is used to treat the surface of the aluminium nitride layer, the oxygen element content on the surface of the aluminium nitride layer is reduced, and an aluminium nitride modified layer is formed, wherein the surface morphology of the modified layer is consistent with that of the aluminium nitride layer in the above step. Through reduction of the oxygen element content on the surface of the modified layer, the surface energy state of the modified layer is reduced, the bonding probability with a buffer layer is increased, and the crystal lattice difference with the buffer layer is lowered. The bottom layer stress of the light emitting diode is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor preparation, in particular to a nitride bottom layer capable of reducing stress, a light emitting diode and a preparation method for the bottom layer. Background technique [0002] The physical vapor deposition method (PVD method) has the characteristics of simple process, less environmental pollution, less raw material consumption, uniform and dense film formation, and strong bonding with the substrate. It is currently being increasingly used in the preparation of semiconductor components. Among them, it is usually used for the preparation of the bottom layer, such as depositing an aluminum nitride layer as a buffer layer. In the existing process, in order to adjust the surface polarity of the aluminum nitride layer, an appropriate amount of oxygen is often introduced during the deposition process. To facilitate the growth of the subsequent epitaxial layer. However, although oxygen can adjust the su...

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Problems solved by technology

However, although oxygen can adjust the surface polarity of the aluminum nitride layer, the incorporation of oxygen into the aluminum nitride layer increases the lattice difference between the aluminum nitride layer and the subsequent epitaxial layer, such as the AlGaN material layer, resulting in The increase of defects and stress caused by lattice mismatch and thermal mismatch with the epitaxial layer reduces the device quality of semiconductor components and their light output efficiency

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