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A crystal temperature capture method and automatic capture device for crystal growth by pulling method

A technology of crystal growth and automatic capture, which is applied in the directions of crystal growth, single crystal growth, and self-melt pulling method, etc., and can solve the problem that the crystal temperature is difficult to be manually intervened

Active Publication Date: 2018-10-16
SUN YAT SEN UNIV
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  • Application Information

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Problems solved by technology

Since the problem of differences in thermal insulation systems is completely unavoidable, it is extremely difficult to judge the crystallization temperature without manual intervention

Method used

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  • A crystal temperature capture method and automatic capture device for crystal growth by pulling method
  • A crystal temperature capture method and automatic capture device for crystal growth by pulling method
  • A crystal temperature capture method and automatic capture device for crystal growth by pulling method

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Embodiment Construction

[0024] The crystal growth temperature is higher than the melting point of the crystal material, but the results of each crystal growth experiment are inconsistent due to the different temperature fields. However, the applicant found through experiments that the temperature change curves of the solid-liquid phase transition process of crystal materials are very consistent. Based on this, the applicant proposed a method for capturing the lower crystal temperature of the crystal growth by the pulling method.

[0025] The lower crystal temperature capture method of the pulling method crystal growth of the present invention, please refer to figure 1 , including the following steps:

[0026] (1) heating the crucible containing the crystal material so that it is heated to a target temperature at a constant rate at a certain heating rate, and the target temperature is higher than the melting point of the crystal material;

[0027] Specifically, the selection of the target temperature...

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Abstract

The invention discloses a seeding temperature capturing method for crystal growth adopting a czochralski method. The method comprises the steps that a crucible for containing a crystal material in a crystal oven is heated at a constant speed with a certain heating rate to the target temperature, and the target temperature is higher than that of a melting point of the crystal material; a curve formed by crucible temperature changing along with time in the temperature rising process is obtained, and the temperature corresponding to a point with the maximum slope in the curve is selected as seeding temperature. According to the seeding temperature capturing method for crystal growth adopting the czochralski method, only by means of simple heating operation, the seeding temperature of a crystal can be selected by utilizing the curve of the temperature changing along with the time in the temperature rising process. The invention further provides automatic capturing equipment for the seeding temperature, a seeding temperature obtaining unit is used for obtaining the curve of the temperature changing along with the time in the temperature rising process, so that the seeding temperature of the crystal is selected and obtained, the influence on seeding operation from labor experience is excluded, and the seeding temperature of the novel crystal can be judged accurately.

Description

technical field [0001] The invention relates to the field of crystal growth by pulling method, in particular to a method for capturing the lower crystal temperature of crystal growth by pulling method and an automatic capturing device. Background technique [0002] The crystallization operation is a key step in determining the crystal quality in the crystal growth process. Among them, the selection of the lower crystal temperature is the most important step in the crystal growth process of the pulling method. If the crystallization temperature is too high, it will directly lead to strong thermal shock on the growth interface, too long necking time, and even direct melting of the seed crystal, which seriously affects the crystal production. On the other hand, if the crystallization temperature is too low, it will lead to rapid crystallization at the crystal growth interface, and a large number of dislocations will be generated at the same time. It is necessary to melt the g...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/20
CPCC30B15/20
Inventor 王彪朱允中林少鹏
Owner SUN YAT SEN UNIV
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